FPF2G120BF07AS Specs and Replacement
Type Designator: FPF2G120BF07AS
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 156 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Package: MODULE FPF2G120BF07AS Substitution - IGBT ⓘ Cross-Reference Search
FPF2G120BF07AS datasheet
fpf2g120bf07as.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Specs: FGY120T65SPD-F085, FGY40T120SMD, FGY60T120SQDN, FGY75T120SQDN, FGY75T95LQDT, FGY75T95SQDT, FPF2C110BI07AS2, FPF2C8P2NL07A, NGTB75N65FL2, HGT1S7N60A4S9A, ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3, ISL9V2540S3ST, ISL9V3036D3S, ISL9V3036S3S, ISL9V3036P3
Keywords - FPF2G120BF07AS transistor spec
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History: STGB8NC60KD | SKM150GB125D | SKM150GB174D
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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