2A200HB12C2F Specs and Replacement
Type Designator: 2A200HB12C2F
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 294 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Package: MODULE 2A200HB12C2F Substitution - IGBT ⓘ Cross-Reference Search
2A200HB12C2F datasheet
2a200hb12c2f.pdf
/ Technical Information IGBT- 2A200HB12C2F IGBT-Module V = 1200V CES I = 200A / I = 400A C nom CRM Typical Applications Motor drives Electrical Features Low switching losses T = 150 C T = 150 C vj op vj op Mechanical Features Copper base plate Module... See More ⇒
Specs: NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , FGPF4533 , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R , AIHD06N60R , AIHD10N60R .
History: 1MBI200HH-120L-50 | 2MBI400TB-060
Keywords - 2A200HB12C2F transistor spec
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History: 1MBI200HH-120L-50 | 2MBI400TB-060
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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