All IGBT. 2A200HB12C2F Datasheet

 

2A200HB12C2F Datasheet and Replacement


   Type Designator: 2A200HB12C2F
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 294 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Qg ⓘ - Total Gate Charge, typ: 1400 nC
   Package: MODULE
 

 2A200HB12C2F substitution

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2A200HB12C2F Datasheet (PDF)

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2A200HB12C2F

/ Technical InformationIGBT-2A200HB12C2FIGBT-ModuleV = 1200VCESI = 200A / I = 400AC nom CRM Typical Applications Motor drives Electrical Features Low switching losses T = 150C T = 150Cvj op vj op Mechanical Features Copper base plateModule

Datasheet: NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , BT15T120ANF , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R , AIHD06N60R , AIHD10N60R .

History: IRG4BC10K

Keywords - 2A200HB12C2F transistor datasheet

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