All IGBT. 2A200HB12C2F Datasheet

 

2A200HB12C2F IGBT. Datasheet pdf. Equivalent


   Type Designator: 2A200HB12C2F
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 1100
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 294
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 30
   Total Gate Charge (Qg), typ, nC: 1400
   Package: MODULE

 2A200HB12C2F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2A200HB12C2F Datasheet (PDF)

 ..1. Size:977K  infineon
 2a200hb12c2f.pdf

2A200HB12C2F 2A200HB12C2F

/ Technical InformationIGBT-2A200HB12C2FIGBT-ModuleV = 1200VCESI = 200A / I = 400AC nom CRM Typical Applications Motor drives Electrical Features Low switching losses T = 150C T = 150Cvj op vj op Mechanical Features Copper base plateModule

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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