2A300HB12C2F Datasheet and Replacement
Type Designator: 2A300HB12C2F
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1450 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 30 nS
Package: MODULE
- IGBT Cross-Reference
2A300HB12C2F Datasheet (PDF)
2a300hb12c2f.pdf
/ Technical InformationIGBT-2A300HB12C2FIGBT-ModuleV = 1200VCESI = 300A / I = 600AC nom CRM Typical Applications Motor drives Electrical Features Low switching losses T = 150C T = 150Cvj op vj op Mechanical Features Copper base plateModule
Datasheet: NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , GT30F124 , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - 2A300HB12C2F transistor datasheet
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History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
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