2A400HB12C2F Datasheet and Replacement
Type Designator: 2A400HB12C2F
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 565 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 40 nS
Qgⓘ - Total Gate Charge, typ: 2800 nC
Package: MODULE
- IGBT Cross-Reference
2A400HB12C2F Datasheet (PDF)
2a400hb12c2f.pdf
/ Technical InformationIGBT-2A400HB12C2FIGBT-ModuleV = 1200VCESI = 400A / I = 800AC nom CRM Typical Applications Motor drives Electrical Features Low switching losses T = 150C T = 150Cvj op vj op Mechanical Features Copper base plateModule
mhpm2a400.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MHPM2A400A60M/DMHPM2A400A60MPreliminary Data SheetHybrid Power ModuleHigh Current IGBT Module400 AMP, 600 VOLT HYBRID POWER MODULE 400 Amp, 600 Volt IGBT HalfBridge Low OnVoltage, High Speed IGBTs Excellent Short Circuit Capability Fast Soft Recovery Diodes Low Inductance PackageM6 bolts
Datasheet: NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , RJP63K2DPP-M0 , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF .
History: AOTF15B65MQ1
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History: AOTF15B65MQ1
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