2A400HB12C2F Specs and Replacement
Type Designator: 2A400HB12C2F
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 2100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 565 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Package: MODULE 2A400HB12C2F Substitution - IGBT ⓘ Cross-Reference Search
2A400HB12C2F datasheet
2a400hb12c2f.pdf
/ Technical Information IGBT- 2A400HB12C2F IGBT-Module V = 1200V CES I = 400A / I = 800A C nom CRM Typical Applications Motor drives Electrical Features Low switching losses T = 150 C T = 150 C vj op vj op Mechanical Features Copper base plate Module... See More ⇒
mhpm2a400.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM2A400A60M/D MHPM2A400A60M Preliminary Data Sheet Hybrid Power Module High Current IGBT Module 400 AMP, 600 VOLT HYBRID POWER MODULE 400 Amp, 600 Volt IGBT Half Bridge Low On Voltage, High Speed IGBTs Excellent Short Circuit Capability Fast Soft Recovery Diodes Low Inductance Package M6 bolts... See More ⇒
Specs: NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , RJP63K2DPP-M0 , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF .
History: 2MBI150N-060 | 2MBI200N-060 | 1MBI50FE-060
Keywords - 2A400HB12C2F transistor spec
2A400HB12C2F cross reference
2A400HB12C2F equivalent finder
2A400HB12C2F lookup
2A400HB12C2F substitution
2A400HB12C2F replacement
History: 2MBI150N-060 | 2MBI200N-060 | 1MBI50FE-060
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
2sc1213 | a1491 transistor | 2sc897 | 2sa818 | 2sa763 | a933 | 2sa818 replacement | irfb3607 datasheet


