AIKW30N60CT Datasheet and Replacement
Type Designator: AIKW30N60CT
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 187 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 108 pF
Package: TO247
AIKW30N60CT substitution
AIKW30N60CT Datasheet (PDF)
aikw30n60ct.pdf

AIKW30N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor
Datasheet: AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , AIKQ100N60CT , AIKQ120N60CT , AIKW20N60CT , SGT40N60NPFDPN , AIKW40N65DF5 , AIKW40N65DH5 , AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 , AIKW75N60CT , AUIRGP4062D-E , AUIRGP4063D-E .
History: APTGT50SK170D1
Keywords - AIKW30N60CT transistor datasheet
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AIKW30N60CT equivalent finder
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History: APTGT50SK170D1



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