AIKW30N60CT Specs and Replacement
Type Designator: AIKW30N60CT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 187 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 108 pF
Package: TO247
AIKW30N60CT Substitution - IGBTⓘ Cross-Reference Search
AIKW30N60CT datasheet
aikw30n60ct.pdf
AIKW30N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor... See More ⇒
Specs: AIHD10N60R, AIHD15N60R, AIHD15N60RF, AIKB20N60CT, AIKP20N60CT, AIKQ100N60CT, AIKQ120N60CT, AIKW20N60CT, CRG40T60AN3H, AIKW40N65DF5, AIKW40N65DH5, AIKW50N60CT, AIKW50N65DF5, AIKW50N65DH5, AIKW75N60CT, AUIRGP4062D-E, AUIRGP4063D-E
Keywords - AIKW30N60CT transistor spec
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