All IGBT. AIKW30N60CT Datasheet

 

AIKW30N60CT Datasheet and Replacement


   Type Designator: AIKW30N60CT
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 187 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 108 pF
   Package: TO247
 

 AIKW30N60CT substitution

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AIKW30N60CT Datasheet (PDF)

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AIKW30N60CT

AIKW30N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG600WB065TLA6EN | IKFW50N65DH5 | SRE75N065FSU2DH | XD075H065CX1S3 | 1MBI30L-060 | YGQ100N65FP | MIXD600PF650TSF

Keywords - AIKW30N60CT transistor datasheet

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