AIKW75N60CT Specs and Replacement
Type Designator: AIKW75N60CT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 288 pF
Package: TO247
AIKW75N60CT Substitution - IGBT ⓘ Cross-Reference Search
AIKW75N60CT datasheet
aikw75n60ct.pdf
AIKW75N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor... See More ⇒
Specs: AIKQ120N60CT, AIKW20N60CT, AIKW30N60CT, AIKW40N65DF5, AIKW40N65DH5, AIKW50N60CT, AIKW50N65DF5, AIKW50N65DH5, FGA60N65SMD, AUIRGP4062D-E, AUIRGP4063D-E, AUIRGPS4070D0, BSM150GB60QQQ, DDB2U30N08VR, DDB6U134N16RR-B11, DDB6U180N16RR-B11, DDB6U30N08VR
Keywords - AIKW75N60CT transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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