All IGBT. AIKW75N60CT Datasheet

 

AIKW75N60CT IGBT. Datasheet pdf. Equivalent


   Type Designator: AIKW75N60CT
   Type: IGBT + Anti-Parallel Diode
   Marking Code: AK75DCT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 428
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 36
   Collector Capacity (Cc), typ, pF: 288
   Total Gate Charge (Qg), typ, nC: 470
   Package: TO247

 AIKW75N60CT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AIKW75N60CT Datasheet (PDF)

 ..1. Size:1972K  infineon
 aikw75n60ct.pdf

AIKW75N60CT AIKW75N60CT

AIKW75N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor

Datasheet: AIKQ120N60CT , AIKW20N60CT , AIKW30N60CT , AIKW40N65DF5 , AIKW40N65DH5 , AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 , CRG40T60AK3HD , AUIRGP4062D-E , AUIRGP4063D-E , AUIRGPS4070D0 , BSM150GB60DLC , DDB2U30N08VR , DDB6U134N16RR-B11 , DDB6U180N16RR-B11 , DDB6U30N08VR .

 

 
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