AIKW75N60CT Datasheet and Replacement
Type Designator: AIKW75N60CT
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 288 pF
Package: TO247
AIKW75N60CT substitution
AIKW75N60CT Datasheet (PDF)
aikw75n60ct.pdf

AIKW75N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor
Datasheet: AIKQ120N60CT , AIKW20N60CT , AIKW30N60CT , AIKW40N65DF5 , AIKW40N65DH5 , AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 , GT30F126 , AUIRGP4062D-E , AUIRGP4063D-E , AUIRGPS4070D0 , BSM150GB60DLC , DDB2U30N08VR , DDB6U134N16RR-B11 , DDB6U180N16RR-B11 , DDB6U30N08VR .
History: IGC15T65QE
Keywords - AIKW75N60CT transistor datasheet
AIKW75N60CT cross reference
AIKW75N60CT equivalent finder
AIKW75N60CT lookup
AIKW75N60CT substitution
AIKW75N60CT replacement
History: IGC15T65QE



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