DDB2U30N08VR Specs and Replacement
Type Designator: DDB2U30N08VR
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 83.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Package: MODULE DDB2U30N08VR Substitution - IGBTⓘ Cross-Reference Search
DDB2U30N08VR datasheet
ddb2u30n08vr.pdf
Technische Information / technical information IGBT-Module DDB2U30N08VR IGBT-modules Diode-Gleichrichter / diode-rectifier Vorl ufige Daten / preliminary data H chstzul ssige Werte / maximum rated values Periodische R ckw. Spitzensperrspannung T = 25 C V 800 V repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Dio. T = 80 C I 48 A forward current RMS maximum p... See More ⇒
Specs: AIKW50N60CT, AIKW50N65DF5, AIKW50N65DH5, AIKW75N60CT, AUIRGP4062D-E, AUIRGP4063D-E, AUIRGPS4070D0, BSM150GB60QQQ, FGH60N60SFD, DDB6U134N16RR-B11, DDB6U180N16RR-B11, DDB6U30N08VR, DDB6U75N16W1R, DF1000R17IE4D-B2, DF150R12RT4, DF200R12KE3, DF200R12PT4-B6
Keywords - DDB2U30N08VR transistor spec
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