DDB2U30N08VR IGBT. Datasheet pdf. Equivalent
Type Designator: DDB2U30N08VR
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 83.5
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 25
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.95
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Rise Time (tr), typ, nS: 20
Package: MODULE
DDB2U30N08VR Transistor Equivalent Substitute - IGBT Cross-Reference Search
DDB2U30N08VR Datasheet (PDF)
ddb2u30n08vr.pdf
Technische Information / technical informationIGBT-ModuleDDB2U30N08VRIGBT-modulesDiode-Gleichrichter / diode-rectifier Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesPeriodische Rckw. SpitzensperrspannungT = 25C V 800 Vrepetitive peak reverse voltageDurchlassstrom Grenzeffektivwert pro Dio.T = 80C I 48 Aforward current RMS maximum p
Datasheet: AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 , AIKW75N60CT , AUIRGP4062D-E , AUIRGP4063D-E , AUIRGPS4070D0 , BSM150GB60DLC , GT30G124 , DDB6U134N16RR-B11 , DDB6U180N16RR-B11 , DDB6U30N08VR , DDB6U75N16W1R , DF1000R17IE4D-B2 , DF150R12RT4 , DF200R12KE3 , DF200R12PT4-B6 .
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IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ