DDB2U30N08VR Datasheet and Replacement
Type Designator: DDB2U30N08VR
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 83.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Package: MODULE
DDB2U30N08VR substitution
DDB2U30N08VR Datasheet (PDF)
ddb2u30n08vr.pdf
Technische Information / technical informationIGBT-ModuleDDB2U30N08VRIGBT-modulesDiode-Gleichrichter / diode-rectifier Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesPeriodische Rckw. SpitzensperrspannungT = 25C V 800 Vrepetitive peak reverse voltageDurchlassstrom Grenzeffektivwert pro Dio.T = 80C I 48 Aforward current RMS maximum p
Datasheet: AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 , AIKW75N60CT , AUIRGP4062D-E , AUIRGP4063D-E , AUIRGPS4070D0 , BSM150GB60DLC , IKW75N60T , DDB6U134N16RR-B11 , DDB6U180N16RR-B11 , DDB6U30N08VR , DDB6U75N16W1R , DF1000R17IE4D-B2 , DF150R12RT4 , DF200R12KE3 , DF200R12PT4-B6 .
History: IRG4MC30F
Keywords - DDB2U30N08VR transistor datasheet
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DDB2U30N08VR lookup
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History: IRG4MC30F
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