DDB6U75N16W1R Specs and Replacement
Type Designator: DDB6U75N16W1R
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 335 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 69 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Package: MODULE DDB6U75N16W1R Substitution - IGBTⓘ Cross-Reference Search
DDB6U75N16W1R datasheet
ddb6u75n16w1r.pdf
Technische Information / Technical Information IGBT-Module DDB6U75N16W1R IGBT-modules Vorl ufige Daten Diode, Gleichrichter / Diode, Rectifier Preliminary Data H chstzul ssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25 C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip T = 100 C I 65 A C FRMSM Maximum RMS forw... See More ⇒
ddb6u134n16rr-b11.pdf
Technische Information / Technical Information IGBT-Modul DDB6U134N16RR_B11 IGBT-Module EconoPACK 2 Modul mit Low Loss IGBT2 und Emitter Controlled Diode und PressFIT / NTC EconoPACK 2 module with Low Loss IGBT2 and Emitter Controlled diode and PressFIT / NTC V = 1600V CES I = 134A / I = 268A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary ... See More ⇒
ddb6u180n16rrp-b37.pdf
DDB6U180N16RRP_B37 EconoPACK 2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / bereits aufgetragenem Thermal Interface Material EconoPACK 2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / pre-applied Thermal Interface Material V = 1600V CES I = 180A / I = 360A C nom CRM Potentielle Anwendungen Potential Applications... See More ⇒
ddb6u180n16rr-b11.pdf
Technische Information / Technical Information IGBT-Modul DDB6U180N16RR_B11 IGBT-Module EconoPACK 2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT EconoPACK 2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT V = 1600V CES I = 180A / I = 360A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxil... See More ⇒
Specs: AUIRGP4062D-E, AUIRGP4063D-E, AUIRGPS4070D0, BSM150GB60QQQ, DDB2U30N08VR, DDB6U134N16RR-B11, DDB6U180N16RR-B11, DDB6U30N08VR, G50T65D, DF1000R17IE4D-B2, DF150R12RT4, DF200R12KE3, DF200R12PT4-B6, DF300R12KE3, DF400R12KE3, DF900R12IP4D, DF900R12IP4DV
Keywords - DDB6U75N16W1R transistor spec
DDB6U75N16W1R cross reference
DDB6U75N16W1R equivalent finder
DDB6U75N16W1R lookup
DDB6U75N16W1R substitution
DDB6U75N16W1R replacement
History: AIKW50N65DF5
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
2n408 | 2sc2690 | d718 datasheet | mp38 transistor | 2sc2389 | b331 transistor | 2sa720 | 2sc1345