All IGBT. DDB6U75N16W1R Datasheet

 

DDB6U75N16W1R Datasheet and Replacement


   Type Designator: DDB6U75N16W1R
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 335 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 69 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 44 nS
   Qg ⓘ - Total Gate Charge, typ: 380 nC
   Package: MODULE
 

 DDB6U75N16W1R substitution

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DDB6U75N16W1R Datasheet (PDF)

 ..1. Size:418K  infineon
 ddb6u75n16w1r.pdf pdf_icon

DDB6U75N16W1R

Technische Information / Technical InformationIGBT-ModuleDDB6U75N16W1RIGBT-modulesVorlufige DatenDiode, Gleichrichter / Diode, Rectifier Preliminary DataHchstzulssige Werte / Maximum Rated ValuesPeriodische SpitzensperrspannungT = 25C V 1600 Vvj RRMRepetitive peak reverse voltageDurchlassstrom Grenzeffektivwert pro ChipT = 100C I 65 AC FRMSMMaximum RMS forw

 9.1. Size:621K  infineon
 ddb6u134n16rr-b11.pdf pdf_icon

DDB6U75N16W1R

Technische Information / Technical InformationIGBT-ModulDDB6U134N16RR_B11IGBT-ModuleEconoPACK2 Modul mit Low Loss IGBT2 und Emitter Controlled Diode und PressFIT / NTCEconoPACK2 module with Low Loss IGBT2 and Emitter Controlled diode and PressFIT / NTC V = 1600VCESI = 134A / I = 268AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxiliary

 9.2. Size:646K  infineon
 ddb6u180n16rrp-b37.pdf pdf_icon

DDB6U75N16W1R

DDB6U180N16RRP_B37EconoPACK2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / bereitsaufgetragenem Thermal Interface MaterialEconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT /pre-applied Thermal Interface Material V = 1600VCESI = 180A / I = 360AC nom CRMPotentielle Anwendungen Potential Applications

 9.3. Size:625K  infineon
 ddb6u180n16rr-b11.pdf pdf_icon

DDB6U75N16W1R

Technische Information / Technical InformationIGBT-ModulDDB6U180N16RR_B11IGBT-ModuleEconoPACK2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFITEconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFITV = 1600VCESI = 180A / I = 360AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxil

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Datasheet: AUIRGP4062D-E , AUIRGP4063D-E , AUIRGPS4070D0 , BSM150GB60DLC , DDB2U30N08VR , DDB6U134N16RR-B11 , DDB6U180N16RR-B11 , DDB6U30N08VR , IRGP4063D , DF1000R17IE4D-B2 , DF150R12RT4 , DF200R12KE3 , DF200R12PT4-B6 , DF300R12KE3 , DF400R12KE3 , DF900R12IP4D , DF900R12IP4DV .

Keywords - DDB6U75N16W1R transistor datasheet

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 DDB6U75N16W1R replacement

 

 
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