DF150R12RT4 Specs and Replacement
Type Designator: DF150R12RT4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 790 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150(100С) A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Package: MODULE DF150R12RT4 Substitution - IGBTⓘ Cross-Reference Search
DF150R12RT4 datasheet
df150r12rt4.pdf
Technische Information / Technical Information IGBT-Module DF150R12RT4 IGBT-modules 34mm Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 34mm module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 150A / I = 300A C nom CRM Typische Anwendungen Typical Applications Anwendungen mit hohen Schaltfreque... See More ⇒
Specs: AUIRGPS4070D0, BSM150GB60QQQ, DDB2U30N08VR, DDB6U134N16RR-B11, DDB6U180N16RR-B11, DDB6U30N08VR, DDB6U75N16W1R, DF1000R17IE4D-B2, MBQ50T65FDSC, DF200R12KE3, DF200R12PT4-B6, DF300R12KE3, DF400R12KE3, DF900R12IP4D, DF900R12IP4DV, F3L100R07W2E3-B11, F3L100R12W2H3-B11
Keywords - DF150R12RT4 transistor spec
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History: SM2G100US120
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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