DF150R12RT4 Datasheet and Replacement
Type Designator: DF150R12RT4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 790 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150(100С) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Qgⓘ - Total Gate Charge, typ: 900 nC
Package: MODULE
- IGBT Cross-Reference
DF150R12RT4 Datasheet (PDF)
df150r12rt4.pdf
Technische Information / Technical InformationIGBT-ModuleDF150R12RT4IGBT-modules34mm Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfreque
Datasheet: AUIRGPS4070D0 , BSM150GB60DLC , DDB2U30N08VR , DDB6U134N16RR-B11 , DDB6U180N16RR-B11 , DDB6U30N08VR , DDB6U75N16W1R , DF1000R17IE4D-B2 , GT45F122 , DF200R12KE3 , DF200R12PT4-B6 , DF300R12KE3 , DF400R12KE3 , DF900R12IP4D , DF900R12IP4DV , F3L100R07W2E3-B11 , F3L100R12W2H3-B11 .
History: XD015H060CX1S3
Keywords - DF150R12RT4 transistor datasheet
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History: XD015H060CX1S3
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