DF200R12KE3 IGBT. Datasheet pdf. Equivalent
Type Designator: DF200R12KE3
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 1040
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 295
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 90
Total Gate Charge (Qg), typ, nC: 1900
Package: MODULE
DF200R12KE3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
DF200R12KE3 Datasheet (PDF)
df200r12ke3.pdf
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Technische Information / technical informationIGBT-ModuleDF200R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage200 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 295 APeriodischer Kollektor Spitzenst
df200r12ke3.pdf
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Technische Information / technical informationIGBT-ModuleDF200R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage200 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 295 APeriodischer Kollektor Spitzenst
df200r12pt4 b6.pdf
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/ Technical InformationIGBT-DF200R12PT4_B6IGBT-modulesEconoPACK4 / IGBT4 and diode andNTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC
df200r12w1h3 b27.pdf
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/ Technical InformationIGBT-DF200R12W1H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 30A / I = 60AC nom CRM Typical Applications Solar Applications Electrical Features Low Switching Losses Mechanical Features Al
df200r12pt4-b6.pdf
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Technische Information / Technical InformationIGBT-ModuleDF200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
![DF200R12KE3](https://alltransistors.com/images/us.png)
![DF200R12KE3](https://alltransistors.com/images/es.png)
![DF200R12KE3](https://alltransistors.com/images/ru.png)
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