DF900R12IP4DV Specs and Replacement
Type Designator: DF900R12IP4DV
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 5100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 900(100C) A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Package: MODULE DF900R12IP4DV Substitution - IGBTⓘ Cross-Reference Search
DF900R12IP4DV datasheet
df900r12ip4d.pdf
Technische Information / Technical Information IGBT-Module DF900R12IP4D IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode PrimePACK 2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications ... See More ⇒
Specs: DDB6U75N16W1R, DF1000R17IE4D-B2, DF150R12RT4, DF200R12KE3, DF200R12PT4-B6, DF300R12KE3, DF400R12KE3, DF900R12IP4D, RJH30E2DPP, F3L100R07W2E3-B11, F3L100R12W2H3-B11, F3L150R07W2E3-B11, F3L150R12W2H3-B11, F3L15R12W2H3-B27, F3L25R12W1T4-B27, F3L300R12ME4-B22, F3L300R12ME4-B23
Keywords - DF900R12IP4DV transistor spec
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History: FD150R12RT4
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