F3L15R12W2H3-B27 IGBT. Datasheet pdf. Equivalent
Type Designator: F3L15R12W2H3-B27
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 145 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 25 nS
Qgⓘ - Total Gate Charge, typ: 75 nC
Package: MODULE
F3L15R12W2H3-B27 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F3L15R12W2H3-B27 Datasheet (PDF)
f3l15r12w2h3-b27.pdf
Technische Information / Technical InformationIGBT-ModuleF3L15R12W2H3_B27IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design
f3l15r12w2h3 b27.pdf
/ Technical InformationIGBT-F3L15R12W2H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features Low inductive design Lo
f3l150r07w2e3 b11.pdf
Technische Information / Technical InformationIGBT-ModuleF3L150R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typic
f3l150r12w2h3 b11.pdf
/ Technical InformationIGBT-F3L150R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 75A / I = 150AC nom CRM
f3l150r07w2e3-b11.pdf
Technische Information / Technical InformationIGBT-ModuleF3L150R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typic
f3l15mr12w2m1 b69.pdf
F3L15MR12W2M1_B69EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTCEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTCVorlufige Daten / Preliminary DataJV = 1200VDSSI = 75A / I = 150AD nom DRMPotentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler
f3l150r12w2h3-b11.pdf
Technische Information / Technical InformationIGBT-ModulF3L150R12W2H3_B11IGBT-ModuleEasyPACK Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications
Datasheet: DF300R12KE3 , DF400R12KE3 , DF900R12IP4D , DF900R12IP4DV , F3L100R07W2E3-B11 , F3L100R12W2H3-B11 , F3L150R07W2E3-B11 , F3L150R12W2H3-B11 , IHW40T60 , F3L25R12W1T4-B27 , F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , FD150R12RT4 , FD1600-1200R17HP4-K-B2 .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2