All IGBT. F3L15R12W2H3-B27 Datasheet

 

F3L15R12W2H3-B27 Datasheet and Replacement


   Type Designator: F3L15R12W2H3-B27
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 145 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Package: MODULE
      - IGBT Cross-Reference

 

F3L15R12W2H3-B27 Datasheet (PDF)

 0.1. Size:1463K  infineon
 f3l15r12w2h3-b27.pdf pdf_icon

F3L15R12W2H3-B27

Technische Information / Technical InformationIGBT-ModuleF3L15R12W2H3_B27IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design

 2.1. Size:1630K  infineon
 f3l15r12w2h3 b27.pdf pdf_icon

F3L15R12W2H3-B27

/ Technical InformationIGBT-F3L15R12W2H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features Low inductive design Lo

 9.1. Size:777K  infineon
 f3l150r07w2e3 b11.pdf pdf_icon

F3L15R12W2H3-B27

Technische Information / Technical InformationIGBT-ModuleF3L150R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typic

 9.2. Size:1158K  infineon
 f3l150r12w2h3 b11.pdf pdf_icon

F3L15R12W2H3-B27

/ Technical InformationIGBT-F3L150R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 75A / I = 150AC nom CRM

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Datasheet: DF300R12KE3 , DF400R12KE3 , DF900R12IP4D , DF900R12IP4DV , F3L100R07W2E3-B11 , F3L100R12W2H3-B11 , F3L150R07W2E3-B11 , F3L150R12W2H3-B11 , YGW40N65F1 , F3L25R12W1T4-B27 , F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , FD150R12RT4 , FD1600-1200R17HP4-K-B2 .

History: MUBW30-12A6K | IXST35N120B | AOTF10B65M1 | MSG100D350FHS | DIM800XSM33-F | MSG20T65HPT1 | MSG40T120FQC

Keywords - F3L15R12W2H3-B27 transistor datasheet

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 F3L15R12W2H3-B27 lookup
 F3L15R12W2H3-B27 substitution
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