All IGBT. F3L25R12W1T4-B27 Datasheet

 

F3L25R12W1T4-B27 Datasheet and Replacement


   Type Designator: F3L25R12W1T4-B27
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 215 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 45 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 14 nS
   Qg ⓘ - Total Gate Charge, typ: 200 nC
   Package: MODULE
 

 F3L25R12W1T4-B27 substitution

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F3L25R12W1T4-B27 Datasheet (PDF)

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F3L25R12W1T4-B27

Technische Information / Technical InformationIGBT-ModuleF3L25R12W1T4_B27IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 25A / I = 50AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design

Datasheet: DF400R12KE3 , DF900R12IP4D , DF900R12IP4DV , F3L100R07W2E3-B11 , F3L100R12W2H3-B11 , F3L150R07W2E3-B11 , F3L150R12W2H3-B11 , F3L15R12W2H3-B27 , CRG15T120BNR3S , F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , FD150R12RT4 , FD1600-1200R17HP4-K-B2 , IGB15N65S5 .

Keywords - F3L25R12W1T4-B27 transistor datasheet

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 F3L25R12W1T4-B27 lookup
 F3L25R12W1T4-B27 substitution
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