F3L25R12W1T4-B27 PDF and Equivalents Search

 

F3L25R12W1T4-B27 Specs and Replacement

Type Designator: F3L25R12W1T4-B27

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 215 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 45 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 14 nS

Package: MODULE

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F3L25R12W1T4-B27 datasheet

 0.1. Size:996K  infineon
 f3l25r12w1t4-b27.pdf pdf_icon

F3L25R12W1T4-B27

Technische Information / Technical Information IGBT-Module F3L25R12W1T4_B27 IGBT-modules Vorl ufige Daten / Preliminary Data V = 1200V CES I = 25A / I = 50A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar Applications Elektrische Eigenschaften Electrical Features Niederinduktives Design ... See More ⇒

Specs: DF400R12KE3, DF900R12IP4D, DF900R12IP4DV, F3L100R07W2E3-B11, F3L100R12W2H3-B11, F3L150R07W2E3-B11, F3L150R12W2H3-B11, F3L15R12W2H3-B27, FGPF4633, F3L300R12ME4-B22, F3L300R12ME4-B23, F3L300R12MT4-B22, FB20R06W1E3-B11, FD1200R17HP4-K-B2, FD150R12RT4, FD1600-1200R17HP4-K-B2, IGB15N65S5

Keywords - F3L25R12W1T4-B27 transistor spec

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