F3L25R12W1T4-B27 IGBT. Datasheet pdf. Equivalent
Type Designator: F3L25R12W1T4-B27
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 215
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 45
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 14
Total Gate Charge (Qg), typ, nC: 200
Package: MODULE
F3L25R12W1T4-B27 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F3L25R12W1T4-B27 Datasheet (PDF)
f3l25r12w1t4-b27.pdf
Technische Information / Technical InformationIGBT-ModuleF3L25R12W1T4_B27IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 25A / I = 50AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design
Datasheet: DF400R12KE3 , DF900R12IP4D , DF900R12IP4DV , F3L100R07W2E3-B11 , F3L100R12W2H3-B11 , F3L150R07W2E3-B11 , F3L150R12W2H3-B11 , F3L15R12W2H3-B27 , RJH60F5DPQ-A0 , F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , FD150R12RT4 , FD1600-1200R17HP4-K-B2 , IGB15N65S5 .
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