FD150R12RT4 PDF and Equivalents Search

 

FD150R12RT4 Specs and Replacement

Type Designator: FD150R12RT4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 790 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150(100C) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Package: MODULE

 FD150R12RT4 Substitution

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FD150R12RT4 datasheet

 ..1. Size:668K  infineon
 fd150r12rt4.pdf pdf_icon

FD150R12RT4

Technische Information / Technical Information IGBT-Module FD150R12RT4 IGBT-modules 34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 150A / I = 300A C nom CRM Typische Anwendungen Typical Applications Anwendungen mit hoh... See More ⇒

Specs: F3L150R12W2H3-B11, F3L15R12W2H3-B27, F3L25R12W1T4-B27, F3L300R12ME4-B22, F3L300R12ME4-B23, F3L300R12MT4-B22, FB20R06W1E3-B11, FD1200R17HP4-K-B2, CRG40T60AK3HD, FD1600-1200R17HP4-K-B2, IGB15N65S5, IGB20N65S5, IGB50N65H5, IGB50N65S5, IGU04N60T, IGW30N60TP, IGW40N60DTP

Keywords - FD150R12RT4 transistor spec

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