All IGBT. FD150R12RT4 Datasheet

 

FD150R12RT4 IGBT. Datasheet pdf. Equivalent


   Type Designator: FD150R12RT4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 790
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 150(100C)
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 20
   Total Gate Charge (Qg), typ, nC: 900
   Package: MODULE

 FD150R12RT4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FD150R12RT4 Datasheet (PDF)

 ..1. Size:668K  infineon
 fd150r12rt4.pdf

FD150R12RT4 FD150R12RT4

Technische Information / Technical InformationIGBT-ModuleFD150R12RT4IGBT-modules34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hoh

Datasheet: F3L150R12W2H3-B11 , F3L15R12W2H3-B27 , F3L25R12W1T4-B27 , F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , MBQ50T65FESC , FD1600-1200R17HP4-K-B2 , IGB15N65S5 , IGB20N65S5 , IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IGW40N60DTP .

 

 
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