All IGBT. FD150R12RT4 Datasheet

 

FD150R12RT4 IGBT. Datasheet pdf. Equivalent


   Type Designator: FD150R12RT4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 790 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150(100C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Qgⓘ - Total Gate Charge, typ: 900 nC
   Package: MODULE

 FD150R12RT4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FD150R12RT4 Datasheet (PDF)

 ..1. Size:668K  infineon
 fd150r12rt4.pdf

FD150R12RT4 FD150R12RT4

Technische Information / Technical InformationIGBT-ModuleFD150R12RT4IGBT-modules34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hoh

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