FD150R12RT4 Datasheet and Replacement
Type Designator: FD150R12RT4
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 790 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150(100C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Package: MODULE
- IGBT Cross-Reference
FD150R12RT4 Datasheet (PDF)
fd150r12rt4.pdf

Technische Information / Technical InformationIGBT-ModuleFD150R12RT4IGBT-modules34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hoh
Datasheet: F3L150R12W2H3-B11 , F3L15R12W2H3-B27 , F3L25R12W1T4-B27 , F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , NGD8201N , FD1600-1200R17HP4-K-B2 , IGB15N65S5 , IGB20N65S5 , IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IGW40N60DTP .
History: MITA150H1700TEH | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | 7MBR25UA120 | MM50G3U120BMX | CRG05T60A44S-G
Keywords - FD150R12RT4 transistor datasheet
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FD150R12RT4 lookup
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History: MITA150H1700TEH | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | 7MBR25UA120 | MM50G3U120BMX | CRG05T60A44S-G



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