All IGBT. FD150R12RT4 Datasheet

 

FD150R12RT4 Datasheet and Replacement


   Type Designator: FD150R12RT4
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 790 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150(100C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Package: MODULE
 

 FD150R12RT4 substitution

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FD150R12RT4 Datasheet (PDF)

 ..1. Size:668K  infineon
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FD150R12RT4

Technische Information / Technical InformationIGBT-ModuleFD150R12RT4IGBT-modules34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hoh

Datasheet: F3L150R12W2H3-B11 , F3L15R12W2H3-B27 , F3L25R12W1T4-B27 , F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , CRG40T60AK3HD , FD1600-1200R17HP4-K-B2 , IGB15N65S5 , IGB20N65S5 , IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IGW40N60DTP .

History: VS-20MT120UFAPBF | STGP19NC60H | IXGH50N60C2 | IRG4PC30FD | IXBT16N170A

Keywords - FD150R12RT4 transistor datasheet

 FD150R12RT4 cross reference
 FD150R12RT4 equivalent finder
 FD150R12RT4 lookup
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