FD1600-1200R17HP4-K-B2 IGBT. Datasheet pdf. Equivalent
Type Designator: FD1600-1200R17HP4-K-B2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 10500
Maximum Collector-Emitter Voltage |Vce|, V: 1700
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 1600(100C)
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 180
Total Gate Charge (Qg), typ, nC: 17000
Package: MODULE
FD1600-1200R17HP4-K-B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FD1600-1200R17HP4-K-B2 Datasheet (PDF)
fd1600-1200r17hp4-k-b2.pdf
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Technische Information / Technical InformationIGBT-ModulFD1600/1200R17HP4-K_B2IGBT-ModuleIHM-B Modul mit Chopper KonfigurationIHM-B module with chopper configurationV = 1700VCESI = 1600A / I = 3200AC nom CRMTypische Anwendungen Typical Applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter High power converters Traktionsumrichter
Datasheet: F3L15R12W2H3-B27 , F3L25R12W1T4-B27 , F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , FD150R12RT4 , NCE80TD65BT , IGB15N65S5 , IGB20N65S5 , IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IGW40N60DTP , IGW50N60TP .
![FD1600-1200R17HP4-K-B2](https://alltransistors.com/images/us.png)
![FD1600-1200R17HP4-K-B2](https://alltransistors.com/images/es.png)
![FD1600-1200R17HP4-K-B2](https://alltransistors.com/images/ru.png)
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