FD1600-1200R17HP4-K-B2 PDF and Equivalents Search

 

FD1600-1200R17HP4-K-B2 Specs and Replacement

Type Designator: FD1600-1200R17HP4-K-B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 10500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 1600(100C) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 180 nS

Package: MODULE

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FD1600-1200R17HP4-K-B2 datasheet

 0.1. Size:611K  infineon
 fd1600-1200r17hp4-k-b2.pdf pdf_icon

FD1600-1200R17HP4-K-B2

Technische Information / Technical Information IGBT-Modul FD1600/1200R17HP4-K_B2 IGBT-Module IHM-B Modul mit Chopper Konfiguration IHM-B module with chopper configuration V = 1700V CES I = 1600A / I = 3200A C nom CRM Typische Anwendungen Typical Applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter High power converters Traktionsumrichter ... See More ⇒

Specs: F3L15R12W2H3-B27, F3L25R12W1T4-B27, F3L300R12ME4-B22, F3L300R12ME4-B23, F3L300R12MT4-B22, FB20R06W1E3-B11, FD1200R17HP4-K-B2, FD150R12RT4, SGP30N60, IGB15N65S5, IGB20N65S5, IGB50N65H5, IGB50N65S5, IGU04N60T, IGW30N60TP, IGW40N60DTP, IGW50N60TP

Keywords - FD1600-1200R17HP4-K-B2 transistor spec

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