IGU04N60T PDF and Equivalents Search

 

IGU04N60T Specs and Replacement

Type Designator: IGU04N60T

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 42 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 9.5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 7 nS

Coesⓘ - Output Capacitance, typ: 20 pF

Package: TO251

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IGU04N60T datasheet

 ..1. Size:458K  infineon
 igu04n60t.pdf pdf_icon

IGU04N60T

IGU04N60T TRENCHSTOP Series q Low Loss IGBT IGBT in TRENCHSTOP technology C G E Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for - frequency inverters - drives PG-TO251-3 TRENCHSTOP technology for 600V applications offers - very tight parameter distribution - hig... See More ⇒

Specs: FB20R06W1E3-B11, FD1200R17HP4-K-B2, FD150R12RT4, FD1600-1200R17HP4-K-B2, IGB15N65S5, IGB20N65S5, IGB50N65H5, IGB50N65S5, RJH60F7BDPQ-A0, IGW30N60TP, IGW40N60DTP, IGW50N60TP, IGW75N65H5, IGZ100N65H5, IGZ50N65H5, IGZ75N65H5, IHFW40N65R5S

Keywords - IGU04N60T transistor spec

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