All IGBT. IGU04N60T Datasheet

 

IGU04N60T Datasheet and Replacement


   Type Designator: IGU04N60T
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 42 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 9.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 7 nS
   Coesⓘ - Output Capacitance, typ: 20 pF
   Package: TO251
 

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IGU04N60T Datasheet (PDF)

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IGU04N60T

IGU04N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP technology CGE Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for : - frequency inverters - drives PG-TO251-3 TRENCHSTOP technology for 600V applications offers : - very tight parameter distribution - hig

Datasheet: FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , FD150R12RT4 , FD1600-1200R17HP4-K-B2 , IGB15N65S5 , IGB20N65S5 , IGB50N65H5 , IGB50N65S5 , STGB10NB37LZ , IGW30N60TP , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S .

History: APTGT200DA170D3 | IXXK100N60B3H1 | IXGH40N120B2D1

Keywords - IGU04N60T transistor datasheet

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