All IGBT. IGZ50N65H5 Datasheet

 

IGZ50N65H5 Datasheet and Replacement


   Type Designator: IGZ50N65H5
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 273 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 7 nS
   Coesⓘ - Output Capacitance, typ: 53 pF
   Package: TO247-4
      - IGBT Cross-Reference

 

IGZ50N65H5 Datasheet (PDF)

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IGZ50N65H5

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGZ50N65H5650V IGBT high speed series fifth generationData sheetIndustrial Power ControlIGZ50N65H5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits:High speed H5 technology offering Ultra low loss switching thanks to Kelvin emitter pin incombination with TRENCHSTOPTM

Datasheet: IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , GT30F125 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 , IHW40N120R5 .

History: AOTF15B65MQ1

Keywords - IGZ50N65H5 transistor datasheet

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