IHFW40N65R5S IGBT. Datasheet pdf. Equivalent
Type Designator: IHFW40N65R5S
Type: IGBT + Anti-Parallel Diode
Marking Code: H40ER5S
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 108 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 61 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 38 nS
Coesⓘ - Output Capacitance, typ: 34 pF
Qgⓘ - Total Gate Charge, typ: 142 nC
Package: TO247
IHFW40N65R5S Transistor Equivalent Substitute - IGBT Cross-Reference Search
IHFW40N65R5S Datasheet (PDF)
ihfw40n65r5s.pdf
IHFW40N65R5STRENCHSTOPTM 5 Advanced IsolationReverse-Conducting IGBT in TRENCHSTOPTM 5 technology with monolithicbody diode in fully isolated packageCFeatures and Benefits:TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE Low ga
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2