All IGBT. IHFW40N65R5S Datasheet

 

IHFW40N65R5S Datasheet and Replacement


   Type Designator: IHFW40N65R5S
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H40ER5S
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 108 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 61 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 38 nS
   Coesⓘ - Output Capacitance, typ: 34 pF
   Qgⓘ - Total Gate Charge, typ: 142 nC
   Package: TO247
      - IGBT Cross-Reference

 

IHFW40N65R5S Datasheet (PDF)

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IHFW40N65R5S

IHFW40N65R5STRENCHSTOPTM 5 Advanced IsolationReverse-Conducting IGBT in TRENCHSTOPTM 5 technology with monolithicbody diode in fully isolated packageCFeatures and Benefits:TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE Low ga

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NCE30TD60BP | FD200R12PT4_B6

Keywords - IHFW40N65R5S transistor datasheet

 IHFW40N65R5S cross reference
 IHFW40N65R5S equivalent finder
 IHFW40N65R5S lookup
 IHFW40N65R5S substitution
 IHFW40N65R5S replacement

 

 
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