All IGBT. IHFW40N65R5S Datasheet

 

IHFW40N65R5S IGBT. Datasheet pdf. Equivalent


   Type Designator: IHFW40N65R5S
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H40ER5S
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 108
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 61
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
   Maximum G-E Threshold Voltag |VGE(th)|, V: 4.8
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 38
   Collector Capacity (Cc), typ, pF: 34
   Total Gate Charge (Qg), typ, nC: 142
   Package: TO247

 IHFW40N65R5S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IHFW40N65R5S Datasheet (PDF)

 ..1. Size:1519K  infineon
 ihfw40n65r5s.pdf

IHFW40N65R5S IHFW40N65R5S

IHFW40N65R5STRENCHSTOPTM 5 Advanced IsolationReverse-Conducting IGBT in TRENCHSTOPTM 5 technology with monolithicbody diode in fully isolated packageCFeatures and Benefits:TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE Low ga

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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