IHFW40N65R5S PDF and Equivalents Search

 

IHFW40N65R5S Specs and Replacement

Type Designator: IHFW40N65R5S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 108 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 61 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 38 nS

Coesⓘ - Output Capacitance, typ: 34 pF

Package: TO247

 IHFW40N65R5S Substitution

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IHFW40N65R5S datasheet

 ..1. Size:1519K  infineon
 ihfw40n65r5s.pdf pdf_icon

IHFW40N65R5S

IHFW40N65R5S TRENCHSTOPTM 5 Advanced Isolation Reverse-Conducting IGBT in TRENCHSTOPTM 5 technology with monolithic body diode in fully isolated package C Features and Benefits TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E Low ga... See More ⇒

Specs: IGU04N60T, IGW30N60TP, IGW40N60DTP, IGW50N60TP, IGW75N65H5, IGZ100N65H5, IGZ50N65H5, IGZ75N65H5, IKW40T120, IHW25N120E1, IHW30N120R5, IHW30N135R5, IHW30N160R5, IHW30N65R5, IHW40N120R5, IHW40N135R5, IKA08N65ET6

Keywords - IHFW40N65R5S transistor spec

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