IHFW40N65R5S Datasheet and Replacement
Type Designator: IHFW40N65R5S
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 108 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 61 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 38 nS
Coesⓘ - Output Capacitance, typ: 34 pF
Package: TO247
IHFW40N65R5S substitution
IHFW40N65R5S Datasheet (PDF)
ihfw40n65r5s.pdf
IHFW40N65R5STRENCHSTOPTM 5 Advanced IsolationReverse-Conducting IGBT in TRENCHSTOPTM 5 technology with monolithicbody diode in fully isolated packageCFeatures and Benefits:TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE Low ga
Datasheet: IGU04N60T , IGW30N60TP , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , GT30G122 , IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 , IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 .
History: IXGH48N60C3C1 | MG1275H-XN2MM | IQS2B75N120K4 | SG7N06P | TGAF40N60F2D | STGWA40S120DF3 | APTGT35SK120D1
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History: IXGH48N60C3C1 | MG1275H-XN2MM | IQS2B75N120K4 | SG7N06P | TGAF40N60F2D | STGWA40S120DF3 | APTGT35SK120D1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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