IKFW40N60DH3E Specs and Replacement
Type Designator: IKFW40N60DH3E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 111 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 34 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
tr ⓘ - Rise Time, typ: 34 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO247
IKFW40N60DH3E Substitution - IGBTⓘ Cross-Reference Search
IKFW40N60DH3E datasheet
ikfw40n60dh3e.pdf
IKFW40N60DH3E TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) Low EMI G Very soft, fast recovery anti-parallel... See More ⇒
Specs: IKB20N65EH5, IKB30N65EH5, IKB30N65ES5, IKB40N65EF5, IKB40N65EH5, IKB40N65ES5, IKD06N60RF, IKD15N60RC2, IXRH40N120, IKFW50N60DH3, IKFW50N60DH3E, IKFW50N60ET, IKFW50N65DH5, IKFW60N60DH3E, IKFW60N60EH3, IKFW75N60ET, IKFW90N60EH3
Keywords - IKFW40N60DH3E transistor spec
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