IKFW40N60DH3E IGBT. Datasheet pdf. Equivalent
Type Designator: IKFW40N60DH3E
Type: IGBT + Anti-Parallel Diode
Marking Code: K40DDH3E
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 111
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 34
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.3
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 34
Collector Capacity (Cc), typ, pF: 50
Total Gate Charge (Qg), typ, nC: 107
Package: TO247
IKFW40N60DH3E Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKFW40N60DH3E Datasheet (PDF)
ikfw40n60dh3e.pdf
IKFW40N60DH3ETRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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