All IGBT. IKFW40N60DH3E Datasheet

 

IKFW40N60DH3E Datasheet and Replacement


   Type Designator: IKFW40N60DH3E
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 111 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 34 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Package: TO247
 

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IKFW40N60DH3E Datasheet (PDF)

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IKFW40N60DH3E

IKFW40N60DH3ETRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel

Datasheet: IKB20N65EH5 , IKB30N65EH5 , IKB30N65ES5 , IKB40N65EF5 , IKB40N65EH5 , IKB40N65ES5 , IKD06N60RF , IKD15N60RC2 , IRG7S313U , IKFW50N60DH3 , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 .

History: STGWT20IH125DF | FGA25N120ANTDTU | STGB19NC60S | STGWA15S120DF3 | MMIX1X100N60B3H1 | SII200N06

Keywords - IKFW40N60DH3E transistor datasheet

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