IKFW40N60DH3E IGBT. Datasheet pdf. Equivalent
Type Designator: IKFW40N60DH3E
Type: IGBT + Anti-Parallel Diode
Marking Code: K40DDH3E
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 111 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 34 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 34 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Qgⓘ - Total Gate Charge, typ: 107 nC
Package: TO247
IKFW40N60DH3E Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKFW40N60DH3E Datasheet (PDF)
ikfw40n60dh3e.pdf
IKFW40N60DH3ETRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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