All IGBT. IKFW75N60ET Datasheet

 

IKFW75N60ET Datasheet and Replacement


   Type Designator: IKFW75N60ET
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 178 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 215 pF
   Package: TO247
      - IGBT Cross-Reference

 

IKFW75N60ET Datasheet (PDF)

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IKFW75N60ET

IKFW75N60ETTRENCHSTOPTM Advanced IsolationTRENCHSTOPTM IGBT copacked with Rapid 1 fast and soft antiparallel diodein fully isolated packageCFeatures:TRENCHSTOP technology offers : Very low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast recovery anti-parallel diode

Datasheet: IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , YGW60N65F1A2 , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T .

History: SKM200GAY173D | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | MM20G3R135B | STGB8NC60KD | CRG05T60A44S-G

Keywords - IKFW75N60ET transistor datasheet

 IKFW75N60ET cross reference
 IKFW75N60ET equivalent finder
 IKFW75N60ET lookup
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