IKFW75N60ET Specs and Replacement
Type Designator: IKFW75N60ET
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 178 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 215 pF
Package: TO247
IKFW75N60ET Substitution - IGBTⓘ Cross-Reference Search
IKFW75N60ET datasheet
ikfw75n60et.pdf
IKFW75N60ET TRENCHSTOPTM Advanced Isolation TRENCHSTOPTM IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Very low V CE(sat) Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) G Low EMI E Very soft, fast recovery anti-parallel diode... See More ⇒
Specs: IKD15N60RC2, IKFW40N60DH3E, IKFW50N60DH3, IKFW50N60DH3E, IKFW50N60ET, IKFW50N65DH5, IKFW60N60DH3E, IKFW60N60EH3, FGW75N60HD, IKFW90N60EH3, IKFW90N65ES5, IKP20N60TA, IKP28N65ES5, IKP39N65ES5, IKP40N65H5, IKW40N65H5, IKQ100N60T
Keywords - IKFW75N60ET transistor spec
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History: IXBF20N360
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