All IGBT. IKFW75N60ET Datasheet

 

IKFW75N60ET IGBT. Datasheet pdf. Equivalent


   Type Designator: IKFW75N60ET
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 178
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 45
   Collector Capacity (Cc), typ, pF: 215
   Package: TO247

 IKFW75N60ET Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKFW75N60ET Datasheet (PDF)

 ..1. Size:2011K  infineon
 ikfw75n60et.pdf

IKFW75N60ET IKFW75N60ET

IKFW75N60ETTRENCHSTOPTM Advanced IsolationTRENCHSTOPTM IGBT copacked with Rapid 1 fast and soft antiparallel diodein fully isolated packageCFeatures:TRENCHSTOP technology offers : Very low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast recovery anti-parallel diode

Datasheet: IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , HGTG30N60A4 , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T .

 

 
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