IKFW75N60ET Datasheet and Replacement
Type Designator: IKFW75N60ET
Type: IGBT + Anti-Parallel Diode
Marking Code: K75DET
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 178 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 215 pF
Qg ⓘ - Total Gate Charge, typ: 440 nC
Package: TO247
IKFW75N60ET substitution
IKFW75N60ET Datasheet (PDF)
ikfw75n60et.pdf
IKFW75N60ETTRENCHSTOPTM Advanced IsolationTRENCHSTOPTM IGBT copacked with Rapid 1 fast and soft antiparallel diodein fully isolated packageCFeatures:TRENCHSTOP technology offers : Very low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast recovery anti-parallel diode
Datasheet: IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , HGTG30N60A4 , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T .
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