All IGBT. IKFW75N60ET Datasheet

 

IKFW75N60ET IGBT. Datasheet pdf. Equivalent


   Type Designator: IKFW75N60ET
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K75DET
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 178 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 215 pF
   Qgⓘ - Total Gate Charge, typ: 440 nC
   Package: TO247

 IKFW75N60ET Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKFW75N60ET Datasheet (PDF)

 ..1. Size:2011K  infineon
 ikfw75n60et.pdf

IKFW75N60ET IKFW75N60ET

IKFW75N60ETTRENCHSTOPTM Advanced IsolationTRENCHSTOPTM IGBT copacked with Rapid 1 fast and soft antiparallel diodein fully isolated packageCFeatures:TRENCHSTOP technology offers : Very low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast recovery anti-parallel diode

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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