IKFW90N65ES5 Datasheet and Replacement
Type Designator: IKFW90N65ES5
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 154 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 94 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.42 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 49 nS
Coesⓘ - Output Capacitance, typ: 131 pF
Package: TO247
IKFW90N65ES5 substitution
IKFW90N65ES5 Datasheet (PDF)
ikfw90n65es5.pdf
IKFW90N65ES5TRENCHSTOPTM 5 Advanced IsolationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltage
ikfw90n60eh3.pdf
IKFW90N60EH3TRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast
Datasheet: IKFW50N60DH3 , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 , IRG4PC40W , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , IKQ40N120CH3 .
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