IKP28N65ES5 PDF and Equivalents Search

 

IKP28N65ES5 Specs and Replacement

Type Designator: IKP28N65ES5

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 130 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 38 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 38 pF

Package: TO220

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IKP28N65ES5 datasheet

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IKP28N65ES5

IKP28N65ES5 High speed switching series 5 th generation TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full rated current RAPID 1 fast and soft anti parallel diode C Features and Benefits High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V CEsat 650V breakdown voltage G Low Q G E IGBT copacked... See More ⇒

Specs: IKFW50N60ET, IKFW50N65DH5, IKFW60N60DH3E, IKFW60N60EH3, IKFW75N60ET, IKFW90N60EH3, IKFW90N65ES5, IKP20N60TA, IRGP4062D, IKP39N65ES5, IKP40N65H5, IKW40N65H5, IKQ100N60T, IKQ120N60T, IKQ40N120CH3, IKQ40N120CT2, IKQ50N120CH3

Keywords - IKP28N65ES5 transistor spec

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