IKP28N65ES5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKP28N65ES5
Type: IGBT + Anti-Parallel Diode
Marking Code: K28EES5
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 130
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 38
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 4.8
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 28
Collector Capacity (Cc), typ, pF: 38
Total Gate Charge (Qg), typ, nC: 50
Package: TO220
IKP28N65ES5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKP28N65ES5 Datasheet (PDF)
ikp28n65es5.pdf
IKP28N65ES5High speed switching series 5 th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low VCEsat 650V breakdown voltageG Low QGE IGBT copacked
Datasheet: IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IRGB20B60PD1 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 .
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