IKP28N65ES5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKP28N65ES5
Type: IGBT + Anti-Parallel Diode
Marking Code: K28EES5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 38 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 38 pF
Qgⓘ - Total Gate Charge, typ: 50 nC
Package: TO220
IKP28N65ES5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKP28N65ES5 Datasheet (PDF)
ikp28n65es5.pdf
IKP28N65ES5High speed switching series 5 th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low VCEsat 650V breakdown voltageG Low QGE IGBT copacked
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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