All IGBT. IKP28N65ES5 Datasheet

 

IKP28N65ES5 Datasheet and Replacement


   Type Designator: IKP28N65ES5
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 130 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 38 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 38 pF
   Package: TO220
 

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IKP28N65ES5 Datasheet (PDF)

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IKP28N65ES5

IKP28N65ES5High speed switching series 5 th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low VCEsat 650V breakdown voltageG Low QGE IGBT copacked

Datasheet: IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , NCE80TD65BT , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 .

History: MMG75J120UZ6TC

Keywords - IKP28N65ES5 transistor datasheet

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