IKY50N120CH3 Datasheet and Replacement
Type Designator: IKY50N120CH3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 652 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 355 pF
Package: TO247-4
- IGBT Cross-Reference
IKY50N120CH3 Datasheet (PDF)
iky50n120ch3.pdf
IKY50N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: 2MBI100UA-120 | SKM150GB12T4
Keywords - IKY50N120CH3 transistor datasheet
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History: 2MBI100UA-120 | SKM150GB12T4
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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