All IGBT. IKY50N120CH3 Datasheet

 

IKY50N120CH3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IKY50N120CH3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K50MCH3
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 652
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 28
   Collector Capacity (Cc), typ, pF: 355
   Total Gate Charge (Qg), typ, nC: 235
   Package: TO247-4

 IKY50N120CH3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKY50N120CH3 Datasheet (PDF)

 ..1. Size:1572K  infineon
 iky50n120ch3.pdf

IKY50N120CH3 IKY50N120CH3

IKY50N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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