IKY50N120CH3 Datasheet. Specs and Replacement

Type Designator: IKY50N120CH3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 652 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 355 pF

Package: TO247-4

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IKY50N120CH3 datasheet

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IKY50N120CH3

IKY50N120CH3 High speed switching series third generation IGBT Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode Features High speed H3 technology offers Ultra-low loss switching losses thanks to Kelvin emitter pin package in combination with High speed H3 technology High efficiency in... See More ⇒

Specs: IKW40N65ES5, IKW50N60DTP, IKW50N65EH5, IKW75N60H333, IKW75N65EH5, IKW75N65ES5, IKY40N120CH3, IKY40N120CS6, BT40T60ANF, IKY75N120CH3, IKY75N120CS6, IKZ50N65EH5, IKZ50N65ES5, IKZ75N65EH5, IKZ75N65ES5, IRG4BC20KDPBF, IRG4BC20UDPBF

Keywords - IKY50N120CH3 transistor spec

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