All IGBT. IKY50N120CH3 Datasheet

 

IKY50N120CH3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IKY50N120CH3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K50MCH3
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 652 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 355 pF
   Qgⓘ - Total Gate Charge, typ: 235 nC
   Package: TO247-4

 IKY50N120CH3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKY50N120CH3 Datasheet (PDF)

 ..1. Size:1572K  infineon
 iky50n120ch3.pdf

IKY50N120CH3 IKY50N120CH3

IKY50N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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