IKY50N120CH3 Datasheet and Replacement
Type Designator: IKY50N120CH3
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 652 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 355 pF
Package: TO247-4
IKY50N120CH3 substitution
IKY50N120CH3 Datasheet (PDF)
iky50n120ch3.pdf
IKY50N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in
Datasheet: IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 , IKY40N120CS6 , IRG7IC28U , IKY75N120CH3 , IKY75N120CS6 , IKZ50N65EH5 , IKZ50N65ES5 , IKZ75N65EH5 , IKZ75N65ES5 , IRG4BC20KDPBF , IRG4BC20UDPBF .
History: IXGH30N60C3D1 | SKM200GAR123D
Keywords - IKY50N120CH3 transistor datasheet
IKY50N120CH3 cross reference
IKY50N120CH3 equivalent finder
IKY50N120CH3 lookup
IKY50N120CH3 substitution
IKY50N120CH3 replacement
History: IXGH30N60C3D1 | SKM200GAR123D
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
tip35 datasheet | tip36c datasheet | 2sc461 | hy1906 | 2sc2238 | 2sc458 transistor | b649a transistor | 2sa606