IRGP4068D-EPBF Datasheet and Replacement

PD - 97250CIRGP4068DPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSIRGP4068D-EPbFFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low Switching Losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C

PD - 97250CIRGP4068DPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSIRGP4068D-EPbFFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low Switching Losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C

PD - 97250CIRGP4068DPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSIRGP4068D-EPbFFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low Switching Losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C

PD - 97250IRGP4068DPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSIRGP4068D-EPbFFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low Switching Losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C