IRGP4068D-EPBF Specs and Replacement
Type Designator: IRGP4068D-EPBF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 330 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 96 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Coesⓘ - Output Capacitance, typ: 245 pF
Package: TO247
IRGP4068D-EPBF Substitution - IGBTⓘ Cross-Reference Search
IRGP4068D-EPBF datasheet
irgp4068dpbf.pdf
PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low Switching Losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C ... See More ⇒
Specs: IRGP4062DPBF, IRGB4062DPBF, IRGP4062D-EPBF, IRGP4063DPBF, IRGP4063PBF, IRGP4066DPBF, IRGP4066D-EPBF, IRGP4068DPBF, AOK40B65H2AL, IRGP4069DPBF, IRGP4650DPBF, IRGP4660DPBF, IRGP50B60PD1PBF, IRGP6690DPBF, IRGP6690D-EPBF, IRGPS46160DPBF, IRGS4640DPBF
Keywords - IRGP4068D-EPBF transistor spec
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History: IRGP4066D-EPBF
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