All IGBT. DGW10N120CTL Datasheet

 

DGW10N120CTL Datasheet and Replacement


   Type Designator: DGW10N120CTL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 157 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 50 nS
   Qgⓘ - Total Gate Charge, typ: 80 nC
   Package: TO247
      - IGBT Cross-Reference

 

DGW10N120CTL Datasheet (PDF)

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DGW10N120CTL

RoHS DGW10N120CTL COMPLIANT IGBT Modules V 1200 V CEI 10 A CV I =10A 1.85 V CE(SAT) C Applications Circuit Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Features Low V Trench-FS IGBT technology CE(sat) Maximum junction temperature 175 Positive temperature coefficient Including fast & sof

Datasheet: IRGP4640DPBF , IRGP4640D-EPBF , DGF15N60CTL , DGF15N60CTL0 , DGP10N60CTL , DGP10N65CTL , DGP15N60CTL , DGP15N65CTL , IRGP4062D , DGW15N120CTL , DGW15N65CTL , DGW20N60CTL , DGW20N65CTL , DGW25N120CTL , DGW30N65BTH , DGW30N65CTH , DGW30N65CTL .

History: STGWT80H65DFB

Keywords - DGW10N120CTL transistor datasheet

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