All IGBT. DGW10N120CTL Datasheet

 

DGW10N120CTL IGBT. Datasheet pdf. Equivalent


   Type Designator: DGW10N120CTL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 157 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 50 nS
   Qgⓘ - Total Gate Charge, typ: 80 nC
   Package: TO247

 DGW10N120CTL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGW10N120CTL Datasheet (PDF)

 ..1. Size:394K  cn yangzhou yangjie elec
 dgw10n120ctl.pdf

DGW10N120CTL DGW10N120CTL

RoHS DGW10N120CTL COMPLIANT IGBT Modules V 1200 V CEI 10 A CV I =10A 1.85 V CE(SAT) C Applications Circuit Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Features Low V Trench-FS IGBT technology CE(sat) Maximum junction temperature 175 Positive temperature coefficient Including fast & sof

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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