DGW10N120CTL Datasheet. Specs and Replacement

Type Designator: DGW10N120CTL  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 157 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: TO247

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DGW10N120CTL datasheet

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DGW10N120CTL

RoHS DGW10N120CTL COMPLIANT IGBT Modules V 1200 V CE I 10 A C V I =10A 1.85 V CE(SAT) C Applications Circuit Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Features Low V Trench-FS IGBT technology CE(sat) Maximum junction temperature 175 Positive temperature coefficient Including fast & sof... See More ⇒

Specs: IRGP4640DPBF, IRGP4640D-EPBF, DGF15N60CTL, DGF15N60CTL0, DGP10N60CTL, DGP10N65CTL, DGP15N60CTL, DGP15N65CTL, IHW20N135R3, DGW15N120CTL, DGW15N65CTL, DGW20N60CTL, DGW20N65CTL, DGW25N120CTL, DGW30N65BTH, DGW30N65CTH, DGW30N65CTL

Keywords - DGW10N120CTL transistor spec

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