All IGBT. DGW25N120CTL Datasheet


DGW25N120CTL IGBT. Datasheet pdf. Equivalent

   Type Designator: DGW25N120CTL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 326
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 32
   Total Gate Charge (Qg), typ, nC: 200
   Package: TO247

 DGW25N120CTL Transistor Equivalent Substitute - IGBT Cross-Reference Search


DGW25N120CTL Datasheet (PDF)

 ..1. Size:496K  cn yangzhou yangjie elec


RoHS DGW25N120CTL COMPLIANT IGBT Discrete V 1200 V CEI 25 A CVCE(SAT) 1.85 V I =25AC Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Features Low V Trench-FS IGBT technology CE(sat) Maximum junction temperature 175 Positive temperature coefficient Including fast

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .


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