All IGBT. DGW25N120CTL Datasheet

 

DGW25N120CTL Datasheet and Replacement


   Type Designator: DGW25N120CTL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 326 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 32 nS
   Qgⓘ - Total Gate Charge, typ: 200 nC
   Package: TO247
      - IGBT Cross-Reference

 

DGW25N120CTL Datasheet (PDF)

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DGW25N120CTL

RoHS DGW25N120CTL COMPLIANT IGBT Discrete V 1200 V CEI 25 A CVCE(SAT) 1.85 V I =25AC Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Features Low V Trench-FS IGBT technology CE(sat) Maximum junction temperature 175 Positive temperature coefficient Including fast

Datasheet: DGP10N65CTL , DGP15N60CTL , DGP15N65CTL , DGW10N120CTL , DGW15N120CTL , DGW15N65CTL , DGW20N60CTL , DGW20N65CTL , FGPF4533 , DGW30N65BTH , DGW30N65CTH , DGW30N65CTL , DGW40N120CTH , DGW40N120CTH0 , DGW40N120CTL , DGW40N65BTH , DGW40N65CTH .

History: IGC189T120T6RL

Keywords - DGW25N120CTL transistor datasheet

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