2SH20 Datasheet and Replacement
Type Designator: 2SH20
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 36 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 160 nS
Package: TO3P
2SH20 substitution
2SH20 Datasheet (PDF)
2sh20.pdf
ADE208293 (Z)2SH20Silicon N-Channel IGBT1st. EditionFeb. 1995ApplicationTO3PHigh speed power switchingFeatures2 High speed switching Low on saturation voltage11. Gate2. Collector132 3. Emitter3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
Datasheet: 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 , 2SH18 , 2SH19 , GT30G122 , 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 .
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