2SH20 Specs and Replacement
Type Designator: 2SH20
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 36 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Package: TO3P
2SH20 Substitution - IGBTⓘ Cross-Reference Search
2SH20 datasheet
2sh20.pdf
ADE 208 293 (Z) 2SH20 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application TO 3P High speed power switching Features 2 High speed switching Low on saturation voltage 1 1. Gate 2. Collector 1 3 2 3. Emitter 3 Table 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit ... See More ⇒
Specs: 2SH12, 2SH13, 2SH14, 2SH15, 2SH16, 2SH17, 2SH18, 2SH19, IKW40T120, 2SH21, 2SH22, 2SH26, 2SH27, 2SH28, 2SH29, 2SH30, 2SH31
Keywords - 2SH20 transistor spec
2SH20 cross reference
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History: MG15J6ES40
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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