DGW60N65BTH Specs and Replacement
Type Designator: DGW60N65BTH
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 395 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: TO247
DGW60N65BTH Substitution - IGBT ⓘ Cross-Reference Search
DGW60N65BTH datasheet
dgw60n65bth.pdf
RoHS DGW60N65BTH COMPLIANT IGBT Discrete V 650 V CE I 60 A C V CE(SAT) 2.10 V I = A C 60 Applications High frequency switching application Medical applications Uninterruptible power supply Motion/servo control Circuit Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High... See More ⇒
Specs: DGW40N120CTH0 , DGW40N120CTL , DGW40N65BTH , DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , GT50JR22 , DGW75N65CTL1 , ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD .
History: NCE20TD60BF
Keywords - DGW60N65BTH transistor spec
DGW60N65BTH cross reference
DGW60N65BTH equivalent finder
DGW60N65BTH lookup
DGW60N65BTH substitution
DGW60N65BTH replacement
History: NCE20TD60BF
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