All IGBT. DGW60N65BTH Datasheet

 

DGW60N65BTH IGBT. Datasheet pdf. Equivalent


   Type Designator: DGW60N65BTH
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 395
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 120
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 75
   Package: TO247

 DGW60N65BTH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGW60N65BTH Datasheet (PDF)

 ..1. Size:437K  cn yangzhou yangjie elec
 dgw60n65bth.pdf

DGW60N65BTH DGW60N65BTH

RoHS DGW60N65BTH COMPLIANT IGBT Discrete V 650 V CEI 60 A CVCE(SAT) 2.10 V I = AC 60 Applications High frequency switching application Medical applications Uninterruptible power supply Motion/servo control Circuit Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DGW50N65BTH

 

 
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