All IGBT. DGW60N65BTH Datasheet

 

DGW60N65BTH IGBT. Datasheet pdf. Equivalent

Type Designator: DGW60N65BTH

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 395

Maximum Collector-Emitter Voltage |Vce|, V: 650

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 120

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1

Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 75

Total Gate Charge (Qg), typ, nC: 240

Package: TO247

DGW60N65BTH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGW60N65BTH Datasheet (PDF)

 ..1. Size:437K  cn yangzhou yangjie elec
 dgw60n65bth.pdf

DGW60N65BTH DGW60N65BTH

RoHS DGW60N65BTH COMPLIANT IGBT Discrete V 650 V CEI 60 A CVCE(SAT) 2.10 V I = AC 60 Applications High frequency switching application Medical applications Uninterruptible power supply Motion/servo control Circuit Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High

Datasheet: DGW40N120CTH0 , DGW40N120CTL , DGW40N65BTH , DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , GT50JR22 , DGW75N65CTL1 , ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD .

 

 
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