All IGBT. DGW60N65BTH Datasheet

 

DGW60N65BTH IGBT. Datasheet pdf. Equivalent


   Type Designator: DGW60N65BTH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 75 nS
   Qgⓘ - Total Gate Charge, typ: 240 nC
   Package: TO247

 DGW60N65BTH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGW60N65BTH Datasheet (PDF)

 ..1. Size:437K  cn yangzhou yangjie elec
 dgw60n65bth.pdf

DGW60N65BTH DGW60N65BTH

RoHS DGW60N65BTH COMPLIANT IGBT Discrete V 650 V CEI 60 A CVCE(SAT) 2.10 V I = AC 60 Applications High frequency switching application Medical applications Uninterruptible power supply Motion/servo control Circuit Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High

Datasheet: DGW40N120CTH0 , DGW40N120CTL , DGW40N65BTH , DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , FGPF4536 , DGW75N65CTL1 , ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD .

 

 
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