DGW60N65BTH IGBT. Datasheet pdf. Equivalent
Type Designator: DGW60N65BTH
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 395
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 120
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 75
Total Gate Charge (Qg), typ, nC: 240
Package: TO247
DGW60N65BTH Transistor Equivalent Substitute - IGBT Cross-Reference Search
DGW60N65BTH Datasheet (PDF)
dgw60n65bth.pdf

RoHS DGW60N65BTH COMPLIANT IGBT Discrete V 650 V CEI 60 A CVCE(SAT) 2.10 V I = AC 60 Applications High frequency switching application Medical applications Uninterruptible power supply Motion/servo control Circuit Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High
Datasheet: DGW40N120CTH0 , DGW40N120CTL , DGW40N65BTH , DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , GT50JR22 , DGW75N65CTL1 , ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD .



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IGBT: JNG8T60FT1 | JNG80T60LS | JNG75T65HYU2 | JNG75T65HXU1 | JNG75T120QZU1 | JNG75T120QS1 | JNG75T120LS | JNG60T60HS | JNG5T65DS1 | JNG50N120QS1 | JNG50N120QFU1