ATGH40N120F2DR Specs and Replacement
Type Designator: ATGH40N120F2DR
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 88 pF
Package: TO247
ATGH40N120F2DR Substitution - IGBT ⓘ Cross-Reference Search
ATGH40N120F2DR datasheet
atgh40n120f2dr.pdf
ATGH40N120F2DR Field Stop Trench IGBT Features TO-247 1200V Field Stop Trench IGBT Technology AEC-Q101 Qualified High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant G C E JEDEC Qualification Applications PTC heater... See More ⇒
Specs: DGW40N65BTH , DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH , DGW75N65CTL1 , FGPF4536 , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR .
History: IRG7PH42UD1M | STGP30H60DF | STGB20M65DF2 | IKW50N65H5 | SKW10N60A | CRG40T60AK3SD | NGTG30N60FLWG
Keywords - ATGH40N120F2DR transistor spec
ATGH40N120F2DR cross reference
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ATGH40N120F2DR substitution
ATGH40N120F2DR replacement
History: IRG7PH42UD1M | STGP30H60DF | STGB20M65DF2 | IKW50N65H5 | SKW10N60A | CRG40T60AK3SD | NGTG30N60FLWG
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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