TGAF40N60F2D PDF and Equivalents Search

 

TGAF40N60F2D Specs and Replacement

Type Designator: TGAF40N60F2D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 79 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 35 nS

Coesⓘ - Output Capacitance, typ: 129 pF

Package: TO3PF

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TGAF40N60F2D datasheet

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TGAF40N60F2D

TGAF40N60F2D Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification Applications G C E UPS, Welder, Inverter, Solar Device Package Marking Remark TGAF40N60F2D TO-3PF TGAF40N60F2D RoHS Absolute Maximum Ratings Parameter Symbol Val... See More ⇒

Specs: DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH , DGW75N65CTL1 , ATGH40N120F2DR , IXGH60N60 , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 .

History: TT025N120EQ | YGW50N65F1A | STGWA40H65FB | SIGC03T60SNC | VS-GB150LH120N

Keywords - TGAF40N60F2D transistor spec

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