TGAF40N60F2D Datasheet and Replacement
Type Designator: TGAF40N60F2D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 79 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 129 pF
Package: TO3PF
TGAF40N60F2D substitution
TGAF40N60F2D Datasheet (PDF)
tgaf40n60f2d.pdf
TGAF40N60F2DField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationApplicationsG C EUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAF40N60F2D TO-3PF TGAF40N60F2D RoHSAbsolute Maximum Ratings Parameter Symbol Val
Datasheet: DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH , DGW75N65CTL1 , ATGH40N120F2DR , GT30J127 , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 .
History: APTGT35SK120D1 | SPT50N65F1A1T8TL | 1MBI300S-120 | IQS2B75N120K4 | MG1275H-XN2MM | MG75J1BS11 | STGWA40S120DF3
Keywords - TGAF40N60F2D transistor datasheet
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History: APTGT35SK120D1 | SPT50N65F1A1T8TL | 1MBI300S-120 | IQS2B75N120K4 | MG1275H-XN2MM | MG75J1BS11 | STGWA40S120DF3
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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