All IGBT. TGAF40N60F2D Datasheet

 

TGAF40N60F2D IGBT. Datasheet pdf. Equivalent


   Type Designator: TGAF40N60F2D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 79 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 129 pF
   Package: TO3PF

 TGAF40N60F2D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TGAF40N60F2D Datasheet (PDF)

 ..1. Size:873K  trinnotech
 tgaf40n60f2d.pdf

TGAF40N60F2D TGAF40N60F2D

TGAF40N60F2DField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationApplicationsG C EUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAF40N60F2D TO-3PF TGAF40N60F2D RoHSAbsolute Maximum Ratings Parameter Symbol Val

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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