TGAN50N90FD Specs and Replacement
Type Designator: TGAN50N90FD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.58 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 94 pF
Package: TO3PN
TGAN50N90FD Substitution - IGBT ⓘ Cross-Reference Search
TGAN50N90FD datasheet
tgan50n90fd.pdf
TGAN50N90FD Field Stop Trench IGBT Features 900V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E Applications C Induction Heating G Inverterized microwave ovens Soft Switching Application... See More ⇒
Specs: TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , IRG7R313U , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS , TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D .
History: STGB18N40LZT4
Keywords - TGAN50N90FD transistor spec
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History: STGB18N40LZT4
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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