All IGBT. TGAN50N90FD Datasheet

 

TGAN50N90FD IGBT. Datasheet pdf. Equivalent


   Type Designator: TGAN50N90FD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.58 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 94 pF
   Qgⓘ - Total Gate Charge, typ: 228 nC
   Package: TO3PN

 TGAN50N90FD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TGAN50N90FD Datasheet (PDF)

 ..1. Size:1000K  trinnotech
 tgan50n90fd.pdf

TGAN50N90FD TGAN50N90FD

TGAN50N90FDField Stop Trench IGBTFeatures 900V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwave ovens Soft Switching Application

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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