All IGBT. HCKW25N120H2 Datasheet

 

HCKW25N120H2 IGBT. Datasheet pdf. Equivalent


   Type Designator: HCKW25N120H2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K25H1202
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 375
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.05
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.9
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 53.3
   Collector Capacity (Cc), typ, pF: 92.7
   Total Gate Charge (Qg), typ, nC: 226
   Package: TO247

 HCKW25N120H2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HCKW25N120H2 Datasheet (PDF)

 ..1. Size:1392K  cn vgsemi
 hckw25n120h2.pdf

HCKW25N120H2 HCKW25N120H2

HCKW25N120H2@Trench-FS Cool-Watt IGBTHCKW25N120H2 is a 1200V25A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo

Datasheet: TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 , TGPF30N40P , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH , MSG100T100FLN , MSG100T100FQW , MSG100T120FQW .

 

 
Back to Top