HCKW25N120H2 Datasheet and Replacement
Type Designator: HCKW25N120H2
Type: IGBT + Anti-Parallel Diode
Marking Code: K25H1202
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.9 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 53.3 nS
Coesⓘ - Output Capacitance, typ: 92.7 pF
Qgⓘ - Total Gate Charge, typ: 226 nC
Package: TO247
HCKW25N120H2 Datasheet (PDF)
hckw25n120h2.pdf
HCKW25N120H2@Trench-FS Cool-Watt IGBTHCKW25N120H2 is a 1200V25A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo
Datasheet: TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 , SGH80N60UFD , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH , MSG100T100FLN , MSG100T100FQW , MSG100T120FQW .
History: CM600DU-24NFH | MPBT20N65EF
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History: CM600DU-24NFH | MPBT20N65EF
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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