All IGBT. HCKW25N120H2 Datasheet

 

HCKW25N120H2 IGBT. Datasheet pdf. Equivalent


   Type Designator: HCKW25N120H2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K25H1202
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.9 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 53.3 nS
   Coesⓘ - Output Capacitance, typ: 92.7 pF
   Qgⓘ - Total Gate Charge, typ: 226 nC
   Package: TO247

 HCKW25N120H2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HCKW25N120H2 Datasheet (PDF)

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 hckw25n120h2.pdf

HCKW25N120H2 HCKW25N120H2

HCKW25N120H2@Trench-FS Cool-Watt IGBTHCKW25N120H2 is a 1200V25A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo

Datasheet: TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 , SGT60N60FD1P7 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH , MSG100T100FLN , MSG100T100FQW , MSG100T120FQW .

 

 
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