HCKW25N120H2 Specs and Replacement
Type Designator: HCKW25N120H2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
tr ⓘ - Rise Time, typ: 53.3 nS
Coesⓘ - Output Capacitance, typ: 92.7 pF
Package: TO247
HCKW25N120H2 Substitution - IGBT ⓘ Cross-Reference Search
HCKW25N120H2 datasheet
hckw25n120h2.pdf
HCKW25N120H2 @ Trench-FS Cool-Watt IGBT HCKW25N120H2 is a 1200V25A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V ,high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS technolo... See More ⇒
Specs: TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 , YGW40N65F1 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH , MSG100T100FLN , MSG100T100FQW , MSG100T120FQW .
History: CRG30T60AK3HD | GT50J341 | STGW40NC60WD | SKM600GA12E4 | KGF20N60PA | GT50J325 | IXSX40N60BD1
Keywords - HCKW25N120H2 transistor spec
HCKW25N120H2 cross reference
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HCKW25N120H2 replacement
History: CRG30T60AK3HD | GT50J341 | STGW40NC60WD | SKM600GA12E4 | KGF20N60PA | GT50J325 | IXSX40N60BD1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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