MSG06T65FLD PDF and Equivalents Search

 

MSG06T65FLD Specs and Replacement

Type Designator: MSG06T65FLD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 56.8 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 31.3 pF

Package: TO252

 MSG06T65FLD Substitution

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MSG06T65FLD datasheet

 ..1. Size:3046K  cn maspower
 msg06t65fld.pdf pdf_icon

MSG06T65FLD

MSG06T65FLD Features Low gate charge Trench FS Technology, saturation voltage V , CE(sat) type =1.6V,I =6A and TC =25 C C RoHS product Applications General purpose inverters UPS Absolute Ratings Tc=25 Parameter Symbol Value Unit Collector-Emmiter Voltage Vces 650 V 12 A Ic T=25 *Collector Current-continuous T=100 6 A Collector Current-... See More ⇒

Specs: TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , IKW50N60H3 , MSG100D350FH , MSG100T100FLN , MSG100T100FQW , MSG100T120FQW , MSG15T120FQC , MSG15T120HLC0 , MSG15T65FQT , MSG15T65FQE .

Keywords - MSG06T65FLD transistor spec

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