All IGBT. MSG06T65FLD Datasheet

 

MSG06T65FLD Datasheet and Replacement


   Type Designator: MSG06T65FLD
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 56.8 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 31.3 pF
   Package: TO252
 

 MSG06T65FLD substitution

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MSG06T65FLD Datasheet (PDF)

 ..1. Size:3046K  cn maspower
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MSG06T65FLD

MSG06T65FLDFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.6V,I =6A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V12 AIc T=25*Collector Current-continuousT=1006 ACollector Current-

Datasheet: TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , CRG60T60AK3HD , MSG100D350FH , MSG100T100FLN , MSG100T100FQW , MSG100T120FQW , MSG15T120FQC , MSG15T120HLC0 , MSG15T65FQT , MSG15T65FQE .

Keywords - MSG06T65FLD transistor datasheet

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