All IGBT. MSG06T65FLD Datasheet

 

MSG06T65FLD IGBT. Datasheet pdf. Equivalent


   Type Designator: MSG06T65FLD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 56.8
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 12
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 17
   Collector Capacity (Cc), typ, pF: 31.3
   Total Gate Charge (Qg), typ, nC: 16.8
   Package: TO252

 MSG06T65FLD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSG06T65FLD Datasheet (PDF)

 ..1. Size:3046K  cn maspower
 msg06t65fld.pdf

MSG06T65FLD MSG06T65FLD

MSG06T65FLDFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.6V,I =6A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V12 AIc T=25*Collector Current-continuousT=1006 ACollector Current-

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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