All IGBT. JNG5T65DS1 Datasheet

 

JNG5T65DS1 IGBT. Datasheet pdf. Equivalent


   Type Designator: JNG5T65DS1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 67.5
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 10
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 10
   Collector Capacity (Cc), typ, pF: 21
   Total Gate Charge (Qg), typ, nC: 10.9
   Package: TO252

 JNG5T65DS1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JNG5T65DS1 Datasheet (PDF)

 ..1. Size:1021K  jiaensemi
 jng5t65ds1.pdf

JNG5T65DS1 JNG5T65DS1

JNG5T65DS1 IGBT Features 650V,5A V =1.8V@V =15V,I =5A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application general inverter and Motor control Absolute Maximum Rating

Datasheet: JNG40T60AI , JNG40T60HS , JNG40T65HUY2 , JNG40T65HYU1 , JNG50N120FLU1 , JNG50N120LS , JNG50N120QFU1 , JNG50N120QS1 , IRG7S313U , JNG60T60HS , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 .

 

 
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