All IGBT. JNG5T65DS1 Datasheet

 

JNG5T65DS1 Datasheet and Replacement


   Type Designator: JNG5T65DS1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 67.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 21 pF
   Package: TO252
      - IGBT Cross-Reference

 

JNG5T65DS1 Datasheet (PDF)

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JNG5T65DS1

JNG5T65DS1 IGBT Features 650V,5A V =1.8V@V =15V,I =5A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application general inverter and Motor control Absolute Maximum Rating

Datasheet: JNG40T60AI , JNG40T60HS , JNG40T65HUY2 , JNG40T65HYU1 , JNG50N120FLU1 , JNG50N120LS , JNG50N120QFU1 , JNG50N120QS1 , IKW50N60T , JNG60T60HS , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 .

History: IXGT20N120B | APT40GP60BG

Keywords - JNG5T65DS1 transistor datasheet

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