JNG5T65DS1 PDF and Equivalents Search

 

JNG5T65DS1 Specs and Replacement


   Type Designator: JNG5T65DS1
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 67.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   tr ⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 21 pF
   Package: TO252
 

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JNG5T65DS1 datasheet

 ..1. Size:1021K  jiaensemi
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JNG5T65DS1

JNG5T65DS1 IGBT Features 650V,5A V =1.8V@V =15V,I =5A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application general inverter and Motor control Absolute Maximum Rating... See More ⇒

Specs: JNG40T60AI , JNG40T60HS , JNG40T65HUY2 , JNG40T65HYU1 , JNG50N120FLU1 , JNG50N120LS , JNG50N120QFU1 , JNG50N120QS1 , SGT60U65FD1PT , JNG60T60HS , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 .

Keywords - JNG5T65DS1 transistor spec

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