All IGBT. JNG5T65DS1 Datasheet

 

JNG5T65DS1 IGBT. Datasheet pdf. Equivalent


   Type Designator: JNG5T65DS1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 67.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 21 pF
   Package: TO252

 JNG5T65DS1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JNG5T65DS1 Datasheet (PDF)

 ..1. Size:1021K  jiaensemi
 jng5t65ds1.pdf

JNG5T65DS1 JNG5T65DS1

JNG5T65DS1 IGBT Features 650V,5A V =1.8V@V =15V,I =5A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application general inverter and Motor control Absolute Maximum Rating

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top