All IGBT. JNG5T65DS1 Datasheet


JNG5T65DS1 IGBT. Datasheet pdf. Equivalent

Type Designator: JNG5T65DS1

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 67.5

Maximum Collector-Emitter Voltage |Vce|, V: 650

Maximum Gate-Emitter Voltage |Vge|, V: 30

Maximum Collector Current |Ic| @25℃, A: 10

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 10

Collector Capacity (Cc), typ, pF: 21

Total Gate Charge (Qg), typ, nC: 10.9

Package: TO252

JNG5T65DS1 Transistor Equivalent Substitute - IGBT Cross-Reference Search


JNG5T65DS1 Datasheet (PDF)

 ..1. Size:1021K  jiaensemi


JNG5T65DS1 IGBT Features 650V,5A V =1.8V@V =15V,I =5A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application general inverter and Motor control Absolute Maximum Rating

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGAN20N135FD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .


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