JNG60T60HS Datasheet and Replacement
Type Designator: JNG60T60HS
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 329 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 110 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 343 nS
Coesⓘ - Output Capacitance, typ: 188 pF
Package: TO247
- IGBT Cross-Reference
JNG60T60HS Datasheet (PDF)
jng60t60hs.pdf

JNG60T60HS IGBT Features 600V,60A V =2.05V@V =15V,I =60A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as SMPS, general inverter and other soft switching
Datasheet: JNG40T60HS , JNG40T65HUY2 , JNG40T65HYU1 , JNG50N120FLU1 , JNG50N120LS , JNG50N120QFU1 , JNG50N120QS1 , JNG5T65DS1 , CRG40T60AK3HD , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 , JT075N065WED .
History: BSM200GA120DLCS | IXST35N120B | YGW25N120T1 | MSG100D350FHS | GT15Q301 | MSG20T65HPT1 | MSG40T120FQC
Keywords - JNG60T60HS transistor datasheet
JNG60T60HS cross reference
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History: BSM200GA120DLCS | IXST35N120B | YGW25N120T1 | MSG100D350FHS | GT15Q301 | MSG20T65HPT1 | MSG40T120FQC



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