All IGBT. JNG60T60HS Datasheet

 

JNG60T60HS IGBT. Datasheet pdf. Equivalent


   Type Designator: JNG60T60HS
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 329
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 110
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.05
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 343
   Collector Capacity (Cc), typ, pF: 188
   Total Gate Charge (Qg), typ, nC: 107.4
   Package: TO247

 JNG60T60HS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JNG60T60HS Datasheet (PDF)

 ..1. Size:1060K  jiaensemi
 jng60t60hs.pdf

JNG60T60HS JNG60T60HS

JNG60T60HS IGBT Features 600V,60A V =2.05V@V =15V,I =60A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as SMPS, general inverter and other soft switching

Datasheet: JNG40T60HS , JNG40T65HUY2 , JNG40T65HYU1 , JNG50N120FLU1 , JNG50N120LS , JNG50N120QFU1 , JNG50N120QS1 , JNG5T65DS1 , IRGP4086 , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 , JT075N065WED .

 

 
Back to Top