JNG60T60HS Datasheet. Specs and Replacement

Type Designator: JNG60T60HS  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 329 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 110 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃

tr ⓘ - Rise Time, typ: 343 nS

Coesⓘ - Output Capacitance, typ: 188 pF

Package: TO247

  📄📄 Copy 

 JNG60T60HS Substitution

- IGBTⓘ Cross-Reference Search

 

JNG60T60HS datasheet

 ..1. Size:1060K  jiaensemi
 jng60t60hs.pdf pdf_icon

JNG60T60HS

JNG60T60HS IGBT Features 600V,60A V =2.05V@V =15V,I =60A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as SMPS, general inverter and other soft switching... See More ⇒

Specs: JNG40T60HS, JNG40T65HUY2, JNG40T65HYU1, JNG50N120FLU1, JNG50N120LS, JNG50N120QFU1, JNG50N120QS1, JNG5T65DS1, IRG4PC50U, JNG75T120LS, JNG75T120QS1, JNG75T120QZU1, JNG75T65HXU1, JNG75T65HYU2, JNG80T60LS, JNG8T60FT1, JT075N065WED

Keywords - JNG60T60HS transistor spec

 JNG60T60HS cross reference
 JNG60T60HS equivalent finder
 JNG60T60HS lookup
 JNG60T60HS substitution
 JNG60T60HS replacement