All IGBT. JNG60T60HS Equivalents Search

 

JNG60T60HS Spec and Replacement


   Type Designator: JNG60T60HS
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 329 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 110 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 343 nS
   Coesⓘ - Output Capacitance, typ: 188 pF
   Package: TO247

 JNG60T60HS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JNG60T60HS specs

 ..1. Size:1060K  jiaensemi
 jng60t60hs.pdf pdf_icon

JNG60T60HS

JNG60T60HS IGBT Features 600V,60A V =2.05V@V =15V,I =60A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as SMPS, general inverter and other soft switching... See More ⇒

Specs: JNG40T60HS , JNG40T65HUY2 , JNG40T65HYU1 , JNG50N120FLU1 , JNG50N120LS , JNG50N120QFU1 , JNG50N120QS1 , JNG5T65DS1 , IRG4PC50U , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 , JT075N065WED .

Keywords - JNG60T60HS transistor spec

 JNG60T60HS cross reference
 JNG60T60HS equivalent finder
 JNG60T60HS lookup
 JNG60T60HS substitution
 JNG60T60HS replacement

 

 
Back to Top

 


 
.