All IGBT. CRG05T60A44S-G Datasheet

 

CRG05T60A44S-G Datasheet and Replacement


   Type Designator: CRG05T60A44S-G
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 55 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 12.98 nS
   Coesⓘ - Output Capacitance, typ: 25 pF
   Package: TO252
 

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CRG05T60A44S-G Datasheet (PDF)

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CRG05T60A44S-G

Silicon FS Trench IGBT CRG05T60A44S-G General Description Feature Parameters VCES 650 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 5 A technology, offering superior conduction and switching performances. Ptot TC=25 55 W RoHS Compliant. VCE(sat) 1.50 V Package TO-252 Features FS Trench Technology, Positive temperature

Datasheet: JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , FGL60N100BNTD , CRG08T60A83L , CRG08T60A93L , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S .

History: IXYX140N90C3

Keywords - CRG05T60A44S-G transistor datasheet

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