CRG05T60A44S-G IGBT. Datasheet pdf. Equivalent
Type Designator: CRG05T60A44S-G
Type: IGBT + Anti-Parallel Diode
Marking Code: G05T60A44S
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 55
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 10
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 12.98
Collector Capacity (Cc), typ, pF: 25
Total Gate Charge (Qg), typ, nC: 20.1
Package: TO252
CRG05T60A44S-G Transistor Equivalent Substitute - IGBT Cross-Reference Search
CRG05T60A44S-G Datasheet (PDF)
crg05t60a44s-g.pdf
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Silicon FS Trench IGBT CRG05T60A44S-G General Description Feature Parameters VCES 650 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 5 A technology, offering superior conduction and switching performances. Ptot TC=25 55 W RoHS Compliant. VCE(sat) 1.50 V Package TO-252 Features FS Trench Technology, Positive temperature
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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