CRG30T60AK3HD Specs and Replacement
Type Designator: CRG30T60AK3HD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 156 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
tr ⓘ - Rise Time, typ: 48 nS
Coesⓘ - Output Capacitance, typ: 102 pF
Package: TO247
CRG30T60AK3HD Substitution - IGBT ⓘ Cross-Reference Search
CRG30T60AK3HD datasheet
crg30t60ak3hd.pdf
Silicon FS Trench IGBT CRG30T60AK3HD General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 30 A Stop (FS) technology, offering superior conduction and switching 156 W Ptot TC=25 VCE(sat) 1.75 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat... See More ⇒
Specs: CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S , FGL60N100BNTD , CRG40T60AK3H , CRG40T60AK3SD , CRG50T60AK3HD , CRG60T60AK3H , CRG60T60AK3SD , SRE100N065FSU , SRE100N065FSU2D6 , SRE100N065FSUD6 .
History: STGW40NC60WD | DM2G75SH6N | SKM600GA12E4 | GT50J341 | KGF20N60PA | IXSX40N60BD1 | GT50J325
Keywords - CRG30T60AK3HD transistor spec
CRG30T60AK3HD cross reference
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CRG30T60AK3HD replacement
History: STGW40NC60WD | DM2G75SH6N | SKM600GA12E4 | GT50J341 | KGF20N60PA | IXSX40N60BD1 | GT50J325
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