All IGBT. CRG30T60AK3HD Datasheet

 

CRG30T60AK3HD Datasheet and Replacement


   Type Designator: CRG30T60AK3HD
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 156 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 48 nS
   Coesⓘ - Output Capacitance, typ: 102 pF
   Package: TO247
 

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CRG30T60AK3HD Datasheet (PDF)

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CRG30T60AK3HD

Silicon FS Trench IGBT CRG30T60AK3HD General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 30 A Stop (FS) technology, offering superior conduction and switching 156 W Ptot TC=25VCE(sat) 1.75 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

Datasheet: CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S , IXRH40N120 , CRG40T60AK3H , CRG40T60AK3SD , CRG50T60AK3HD , CRG60T60AK3H , CRG60T60AK3SD , SRE100N065FSU , SRE100N065FSU2D6 , SRE100N065FSUD6 .

History: F3L75R07W2E3_B11 | MWI60-12T6K | CM150DY-12NF | IRG4BC20KDPBF | IRG4IBC30UD | MWI50-06A7T | CM200DY-12NF

Keywords - CRG30T60AK3HD transistor datasheet

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