All IGBT. CRG30T60AK3HD Datasheet

 

CRG30T60AK3HD IGBT. Datasheet pdf. Equivalent


   Type Designator: CRG30T60AK3HD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G30T60AK3HD
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 156 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 48 nS
   Coesⓘ - Output Capacitance, typ: 102 pF
   Qgⓘ - Total Gate Charge, typ: 162 nC
   Package: TO247

 CRG30T60AK3HD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CRG30T60AK3HD Datasheet (PDF)

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 crg30t60ak3hd.pdf

CRG30T60AK3HD CRG30T60AK3HD

Silicon FS Trench IGBT CRG30T60AK3HD General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 30 A Stop (FS) technology, offering superior conduction and switching 156 W Ptot TC=25VCE(sat) 1.75 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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