All IGBT. CRG30T60AK3HD Datasheet

 

CRG30T60AK3HD Datasheet and Replacement


   Type Designator: CRG30T60AK3HD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G30T60AK3HD
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 156 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 48 nS
   Coesⓘ - Output Capacitance, typ: 102 pF
   Qgⓘ - Total Gate Charge, typ: 162 nC
   Package: TO247
      - IGBT Cross-Reference

 

CRG30T60AK3HD Datasheet (PDF)

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CRG30T60AK3HD

Silicon FS Trench IGBT CRG30T60AK3HD General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 30 A Stop (FS) technology, offering superior conduction and switching 156 W Ptot TC=25VCE(sat) 1.75 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 100MT060WDF | MII145-12A3 | 1MBI600NN-060 | BSM100GB120DN2 | IKW75N65ES5

Keywords - CRG30T60AK3HD transistor datasheet

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