CRG50T60AK3HD PDF and Equivalents Search

 

CRG50T60AK3HD Specs and Replacement

Type Designator: CRG50T60AK3HD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 92 nS

Coesⓘ - Output Capacitance, typ: 189 pF

Package: TO247

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CRG50T60AK3HD datasheet

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 crg50t60ak3hd.pdf pdf_icon

CRG50T60AK3HD

Silicon FS Trench IGBT CRG50T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 50 A Stop (FS) technology, offering superior conduction and switching 500 W Ptot TC=25 VCE(sat) 1.8 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati... See More ⇒

Specs: CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S , CRG30T60AK3HD , CRG40T60AK3H , CRG40T60AK3SD , TGD30N40P , CRG60T60AK3H , CRG60T60AK3SD , SRE100N065FSU , SRE100N065FSU2D6 , SRE100N065FSUD6 , SRE100N065FSUD8 , SRE100N120FSUDA , SRE15N060FSUDE .

History: ISL9V5045S3ST-F085

Keywords - CRG50T60AK3HD transistor spec

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