All IGBT. CRG50T60AK3HD Datasheet

 

CRG50T60AK3HD IGBT. Datasheet pdf. Equivalent


   Type Designator: CRG50T60AK3HD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G50T60AK3HD
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 500
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 92
   Collector Capacity (Cc), typ, pF: 189
   Total Gate Charge (Qg), typ, nC: 303
   Package: TO247

 CRG50T60AK3HD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CRG50T60AK3HD Datasheet (PDF)

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 crg50t60ak3hd.pdf

CRG50T60AK3HD CRG50T60AK3HD

Silicon FS Trench IGBT CRG50T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 50 A Stop (FS) technology, offering superior conduction and switching 500 W Ptot TC=25VCE(sat) 1.8 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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