All IGBT. CRG50T60AK3HD Datasheet

 

CRG50T60AK3HD Datasheet and Replacement


   Type Designator: CRG50T60AK3HD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G50T60AK3HD
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 92 nS
   Coesⓘ - Output Capacitance, typ: 189 pF
   Qg ⓘ - Total Gate Charge, typ: 303 nC
   Package: TO247
 

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CRG50T60AK3HD Datasheet (PDF)

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CRG50T60AK3HD

Silicon FS Trench IGBT CRG50T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 50 A Stop (FS) technology, offering superior conduction and switching 500 W Ptot TC=25VCE(sat) 1.8 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRGPS4067D | IXGT28N60B | IGC109T120T6RL | IXXP50N60B3 | IXXN200N60B3 | IKW30N65NL5 | IXYH82N120C3

Keywords - CRG50T60AK3HD transistor datasheet

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