All IGBT. CRG50T60AK3HD Datasheet

 

CRG50T60AK3HD IGBT. Datasheet pdf. Equivalent


   Type Designator: CRG50T60AK3HD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G50T60AK3HD
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 92 nS
   Coesⓘ - Output Capacitance, typ: 189 pF
   Qgⓘ - Total Gate Charge, typ: 303 nC
   Package: TO247

 CRG50T60AK3HD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CRG50T60AK3HD Datasheet (PDF)

 ..1. Size:1239K  wuxi china
 crg50t60ak3hd.pdf

CRG50T60AK3HD CRG50T60AK3HD

Silicon FS Trench IGBT CRG50T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 50 A Stop (FS) technology, offering superior conduction and switching 500 W Ptot TC=25VCE(sat) 1.8 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

Datasheet: CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S , CRG30T60AK3HD , CRG40T60AK3H , CRG40T60AK3SD , RJP6065DPM , CRG60T60AK3H , CRG60T60AK3SD , SRE100N065FSU , SRE100N065FSU2D6 , SRE100N065FSUD6 , SRE100N065FSUD8 , SRE100N120FSUDA , SRE15N060FSUDE .

 

 
Back to Top