GT30G122 Spec and Replacement
Type Designator: GT30G122
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 25 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6(max) V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Package: TO220F
GT30G122 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT30G122 specs
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Specs: SRE80N065FSU2 , SRE80N065FSU2DB , SRE80N065FSUD6 , SRE80N065FSUD8 , OST80N65HMF , HCKW75N65GH2 , HCKZ75N65GH2 , CRG40T120BK3S , RJP63F3DPP-M0 , IGW40T60 , IGW40T60K , IKW75N60TA , IGW40N60TP , IXSM35N100A , IXSM40N60 , GT45F122 , GT30G131 .
Keywords - GT30G122 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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