All IGBT. IXSM40N60 Datasheet

 

IXSM40N60 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXSM40N60
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 300
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 75
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.5(max)
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 170
   Collector Capacity (Cc), typ, pF: 350
   Total Gate Charge (Qg), typ, nC: 190
   Package: TO3

 IXSM40N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXSM40N60 Datasheet (PDF)

 9.1. Size:102K  ixys
ixsm45n100.pdf

IXSM40N60
IXSM40N60

Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 VIXSM 45N100 IC25 = 75 AVCE(sat) = 2.7 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC90 TC = 90C45 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 180 A

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top