IXSM40N60 Datasheet. Specs and Replacement

Type Designator: IXSM40N60  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 170 nS

Coesⓘ - Output Capacitance, typ: 350 pF

Package: TO3

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IXSM40N60 datasheet

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 ixsh40n60 ixsh40n60a ixsm40n60 ixsm40n60a.pdf pdf_icon

IXSM40N60

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IXSM40N60

Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 V IXSM 45N100 IC25 = 75 A VCE(sat) = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A IC90 TC = 90 C45 A TO-204 AE (IXSM) ICM TC = 25 C, 1 ms 180 A ... See More ⇒

Specs: HCKZ75N65GH2, CRG40T120BK3S, GT30G122, IGW40T60, IGW40T60K, IKW75N60TA, IGW40N60TP, IXSM35N100A, IRGP4063D, GT45F122, GT30G131, DGU4020GR, GT30F126, GT30F133, GT30F132, HIHS50N65H-SA, HIA75N65H-SA

Keywords - IXSM40N60 transistor spec

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