GT30F126 Specs and Replacement
The GT30F126 is an Insulated Gate Bipolar Transistor designed for high-power switching applications. It combines the high input impedance of a MOSFET with the low conduction loss of a bipolar transistor. The device is optimized for medium voltage operation and supports fast switching with low turn-off losses. The GT30F126 features high current capability, good thermal stability, reliable performance under harsh electrical conditions.
Type Designator: GT30F126
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 18 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
Package: TO220F
GT30F126 Substitution - IGBT ⓘ Cross-Reference Search
GT30F126 datasheet
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Specs: IGW40T60K , IKW75N60TA , IGW40N60TP , IXSM35N100A , IXSM40N60 , GT45F122 , GT30G131 , DGU4020GR , SGT40N60FD2PN , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA .
History: GT30F132
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History: GT30F132
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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