GT30F126 Datasheet. Specs and Replacement

The GT30F126 is an Insulated Gate Bipolar Transistor designed for high-power switching applications. It combines the high input impedance of a MOSFET with the low conduction loss of a bipolar transistor. The device is optimized for medium voltage operation and supports fast switching with low turn-off losses. The GT30F126 features high current capability, good thermal stability, reliable performance under harsh electrical conditions.

Type Designator: GT30F126  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 18 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃

Package: TO220F

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GT30F126 datasheet

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Specs: IGW40T60K, IKW75N60TA, IGW40N60TP, IXSM35N100A, IXSM40N60, GT45F122, GT30G131, DGU4020GR, CRG40T60AK3HD, GT30F133, GT30F132, HIHS50N65H-SA, HIA75N65H-SA, HIA30N65T-SA, HIW30N65T-SA, HIA40N120T-SA, HIA30N140CIH-DA

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