All IGBT. HIHS50N65H-SA Datasheet

 

HIHS50N65H-SA IGBT. Datasheet pdf. Equivalent


   Type Designator: HIHS50N65H-SA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 136
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 85
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 25
   Collector Capacity (Cc), typ, pF: 140
   Total Gate Charge (Qg), typ, nC: 105
   Package: TO247

 HIHS50N65H-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIHS50N65H-SA Datasheet (PDF)

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 hihs50n65h-sa.pdf

HIHS50N65H-SA HIHS50N65H-SA

Aug 2023HIHS50N65H-SA (TO-247 Isolation)650V N-Channel Trench Field Stop IGBTFeaturesKey Parameters Very Low VCE(sat)Parameter Value Unit Extremely low switching lossVCES 650 V Excellent stability and uniformityIC 50 A Soft Fast Reverse Recovery DiodeVCE(sat) 1.45 V Maximum Junction temperature, TJ(max)=175 2,500VRMS electrical isolationEtot 1.

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