HIHS50N65H-SA Datasheet. Specs and Replacement

Type Designator: HIHS50N65H-SA  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 136 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 85 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 140 pF

Package: TO247

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HIHS50N65H-SA datasheet

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HIHS50N65H-SA

Aug 2023 HIHS50N65H-SA (TO-247 Isolation) 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit Extremely low switching loss VCES 650 V Excellent stability and uniformity IC 50 A Soft Fast Reverse Recovery Diode VCE(sat) 1.45 V Maximum Junction temperature, TJ(max)=175 2,500VRMS electrical isolation Etot 1.... See More ⇒

Specs: IXSM35N100A, IXSM40N60, GT45F122, GT30G131, DGU4020GR, GT30F126, GT30F133, GT30F132, RJH30E2DPP, HIA75N65H-SA, HIA30N65T-SA, HIW30N65T-SA, HIA40N120T-SA, HIA30N140CIH-DA, HIA50N65T-JA, HIA50N65H-JA, HIA50N65T-SA

Keywords - HIHS50N65H-SA transistor spec

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