All IGBT. HIHS50N65H-SA Datasheet

 

HIHS50N65H-SA Datasheet and Replacement


   Type Designator: HIHS50N65H-SA
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 136 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Package: TO247
 

 HIHS50N65H-SA substitution

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HIHS50N65H-SA Datasheet (PDF)

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HIHS50N65H-SA

Aug 2023HIHS50N65H-SA (TO-247 Isolation)650V N-Channel Trench Field Stop IGBTFeaturesKey Parameters Very Low VCE(sat)Parameter Value Unit Extremely low switching lossVCES 650 V Excellent stability and uniformityIC 50 A Soft Fast Reverse Recovery DiodeVCE(sat) 1.45 V Maximum Junction temperature, TJ(max)=175 2,500VRMS electrical isolationEtot 1.

Datasheet: IXSM35N100A , IXSM40N60 , GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 , YGW60N65F1A1 , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA .

Keywords - HIHS50N65H-SA transistor datasheet

 HIHS50N65H-SA cross reference
 HIHS50N65H-SA equivalent finder
 HIHS50N65H-SA lookup
 HIHS50N65H-SA substitution
 HIHS50N65H-SA replacement

 

 
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