HIA75N65H-SA Datasheet. Specs and Replacement

Type Designator: HIA75N65H-SA  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 395 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

Package: TO247

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HIA75N65H-SA datasheet

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HIA75N65H-SA

Aug 2023 HIA75N65H-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 75 A Excellent stability and uniformity VCE(sat) 1.50 V Soft Fast Reverse Recovery Diode Etot 3.79 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Solar ... See More ⇒

Specs: IXSM40N60, GT45F122, GT30G131, DGU4020GR, GT30F126, GT30F133, GT30F132, HIHS50N65H-SA, RJP63F3DPP-M0, HIA30N65T-SA, HIW30N65T-SA, HIA40N120T-SA, HIA30N140CIH-DA, HIA50N65T-JA, HIA50N65H-JA, HIA50N65T-SA, HIA50N65H-SA

Keywords - HIA75N65H-SA transistor spec

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