All IGBT. HIA75N65H-SA Datasheet

 

HIA75N65H-SA Datasheet and Replacement


   Type Designator: HIA75N65H-SA
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Package: TO247
      - IGBT Cross-Reference

 

HIA75N65H-SA Datasheet (PDF)

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HIA75N65H-SA

Aug 2023HIA75N65H-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 75 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 3.79 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: STGW25H120F2 | 7MBR50VP120-50 | AFGY100T65SPD | APT44GA60SD30C | IXXA50N60B3 | 2SH20 | FD400R33KF2C

Keywords - HIA75N65H-SA transistor datasheet

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