HIA75N65H-SA IGBT. Datasheet pdf. Equivalent
Type Designator: HIA75N65H-SA
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 395
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 100
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.8
Maximum Junction Temperature (Tj), ℃: 175
Total Gate Charge (Qg), typ, nC: 151
Package: TO247
HIA75N65H-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search
HIA75N65H-SA Datasheet (PDF)
hia75n65h-sa.pdf

Aug 2023HIA75N65H-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 75 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 3.79 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar
Datasheet: IXSM40N60 , GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , RJH60F5DPQ-A0 , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA .



LIST
Last Update
IGBT: SGT10U60SDM2D | SGTQ40T120SDB2P7 | SGTQ30NE40I1DTR | SGTQ200V75SDB1PWD | SGTQ200V75SDB1PWA | SGTQ160V65SDB1APWA | SGTQ160V65SDB1APW | SGTP75V65SDS1P7 | SGTP75V65SDB1P7 | SGTP75V65FDB1P7 | SGTP75V65FDB1P4B