All IGBT. HIA75N65H-SA Datasheet

 

HIA75N65H-SA IGBT. Datasheet pdf. Equivalent

Type Designator: HIA75N65H-SA

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 395

Maximum Collector-Emitter Voltage |Vce|, V: 650

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 100

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5

Maximum G-E Threshold Voltag |VGE(th)|, V: 5.8

Maximum Junction Temperature (Tj), ℃: 175

Total Gate Charge (Qg), typ, nC: 151

Package: TO247

HIA75N65H-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIA75N65H-SA Datasheet (PDF)

 ..1. Size:531K  semihow
 hia75n65h-sa.pdf

HIA75N65H-SA HIA75N65H-SA

Aug 2023HIA75N65H-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 75 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 3.79 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar

Datasheet: IXSM40N60 , GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , RJH60F5DPQ-A0 , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA .

 

 
Back to Top