All IGBT. HIA75N65H-SA Datasheet

 

HIA75N65H-SA IGBT. Datasheet pdf. Equivalent


   Type Designator: HIA75N65H-SA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Qgⓘ - Total Gate Charge, typ: 151 nC
   Package: TO247

 HIA75N65H-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIA75N65H-SA Datasheet (PDF)

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 hia75n65h-sa.pdf

HIA75N65H-SA HIA75N65H-SA

Aug 2023HIA75N65H-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 75 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 3.79 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar

Datasheet: IXSM40N60 , GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , SGT40N60FD2PN , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA .

 

 
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