All IGBT. HIW30N65T-SA Datasheet

 

HIW30N65T-SA IGBT. Datasheet pdf. Equivalent


   Type Designator: HIW30N65T-SA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 188
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.8
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 14.5
   Collector Capacity (Cc), typ, pF: 67.5
   Total Gate Charge (Qg), typ, nC: 59
   Package: TO263

 HIW30N65T-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIW30N65T-SA Datasheet (PDF)

 ..1. Size:518K  semihow
 hiw30n65t-sa.pdf

HIW30N65T-SA HIW30N65T-SA

Aug 2023HIW30N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 0.66 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

Datasheet: GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , RJH3047 , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA .

 

 
Back to Top