All IGBT. HIW30N65T-SA Datasheet

 

HIW30N65T-SA IGBT. Datasheet pdf. Equivalent


   Type Designator: HIW30N65T-SA
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 188 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 14.5 nS
   Coesⓘ - Output Capacitance, typ: 67.5 pF
   Package: TO263

 HIW30N65T-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIW30N65T-SA Datasheet (PDF)

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 hiw30n65t-sa.pdf

HIW30N65T-SA HIW30N65T-SA

Aug 2023HIW30N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 0.66 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

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