All IGBT. HIW30N65T-SA Datasheet

 

HIW30N65T-SA Datasheet and Replacement


   Type Designator: HIW30N65T-SA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 188 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 14.5 nS
   Coesⓘ - Output Capacitance, typ: 67.5 pF
   Qgⓘ - Total Gate Charge, typ: 59 nC
   Package: TO263
      - IGBT Cross-Reference

 

HIW30N65T-SA Datasheet (PDF)

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HIW30N65T-SA

Aug 2023HIW30N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 0.66 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

Datasheet: GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , SGT60N60FD1P7 , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA .

History: HIA50N65T-SA | APT11GF120BRD1 | SG50N06DS

Keywords - HIW30N65T-SA transistor datasheet

 HIW30N65T-SA cross reference
 HIW30N65T-SA equivalent finder
 HIW30N65T-SA lookup
 HIW30N65T-SA substitution
 HIW30N65T-SA replacement

 

 
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