All IGBT. HIA40N120T-SA Datasheet

 

HIA40N120T-SA IGBT. Datasheet pdf. Equivalent


   Type Designator: HIA40N120T-SA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 428
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.1
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 20
   Collector Capacity (Cc), typ, pF: 157
   Total Gate Charge (Qg), typ, nC: 175
   Package: TO247

 HIA40N120T-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIA40N120T-SA Datasheet (PDF)

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 hia40n120t-sa.pdf

HIA40N120T-SA HIA40N120T-SA

Aug 2023HIA40N120T-SA1200V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1200 V Extremely low switching lossIC 40 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 3.86 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247

Datasheet: DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , FGPF4633 , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 .

 

 
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