HIA40N120T-SA Datasheet. Specs and Replacement

Type Designator: HIA40N120T-SA  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 428 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 157 pF

Package: TO247

  📄📄 Copy 

 HIA40N120T-SA Substitution

- IGBTⓘ Cross-Reference Search

 

HIA40N120T-SA datasheet

 ..1. Size:514K  semihow
 hia40n120t-sa.pdf pdf_icon

HIA40N120T-SA

Aug 2023 HIA40N120T-SA 1200V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 1200 V Extremely low switching loss IC 40 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 3.86 mJ Maximum Junction temperature, TJ(max)=175 Package & Internal Circuit Application TO-247 ... See More ⇒

Specs: DGU4020GR, GT30F126, GT30F133, GT30F132, HIHS50N65H-SA, HIA75N65H-SA, HIA30N65T-SA, HIW30N65T-SA, IRGP4086, HIA30N140CIH-DA, HIA50N65T-JA, HIA50N65H-JA, HIA50N65T-SA, HIA50N65H-SA, HIA50N65IH-JA, HIA20N140IH-DA, GT30F122

Keywords - HIA40N120T-SA transistor spec

 HIA40N120T-SA cross reference
 HIA40N120T-SA equivalent finder
 HIA40N120T-SA lookup
 HIA40N120T-SA substitution
 HIA40N120T-SA replacement