HIA40N120T-SA Datasheet and Replacement
Type Designator: HIA40N120T-SA
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 157 pF
Package: TO247
HIA40N120T-SA substitution
HIA40N120T-SA Datasheet (PDF)
hia40n120t-sa.pdf

Aug 2023HIA40N120T-SA1200V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1200 V Extremely low switching lossIC 40 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 3.86 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247
Datasheet: DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , SGT60N60FD1P7 , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 .
History: IRG4PC50FD
Keywords - HIA40N120T-SA transistor datasheet
HIA40N120T-SA cross reference
HIA40N120T-SA equivalent finder
HIA40N120T-SA lookup
HIA40N120T-SA substitution
HIA40N120T-SA replacement
History: IRG4PC50FD



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