All IGBT. HIA40N120T-SA Datasheet

 

HIA40N120T-SA Datasheet and Replacement


   Type Designator: HIA40N120T-SA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 428 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.1 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 157 pF
   Qg ⓘ - Total Gate Charge, typ: 175 nC
   Package: TO247
 

 HIA40N120T-SA substitution

   - IGBT ⓘ Cross-Reference Search

 

HIA40N120T-SA Datasheet (PDF)

 ..1. Size:514K  semihow
 hia40n120t-sa.pdf pdf_icon

HIA40N120T-SA

Aug 2023HIA40N120T-SA1200V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1200 V Extremely low switching lossIC 40 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 3.86 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG4PH40K | IXSH24N60B

Keywords - HIA40N120T-SA transistor datasheet

 HIA40N120T-SA cross reference
 HIA40N120T-SA equivalent finder
 HIA40N120T-SA lookup
 HIA40N120T-SA substitution
 HIA40N120T-SA replacement

 

 
Back to Top

 


 
.