All IGBT. HIA40N120T-SA Datasheet


HIA40N120T-SA IGBT. Datasheet pdf. Equivalent

Type Designator: HIA40N120T-SA

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 428

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 80

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.1

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 20

Collector Capacity (Cc), typ, pF: 157

Total Gate Charge (Qg), typ, nC: 175

Package: TO247

HIA40N120T-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search


HIA40N120T-SA Datasheet (PDF)

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Aug 2023HIA40N120T-SA1200V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1200 V Extremely low switching lossIC 40 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 3.86 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247

Datasheet: DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , IRGB4062D , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 .


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