All IGBT. HIA20N140IH-DA Datasheet

 

HIA20N140IH-DA Datasheet and Replacement


   Type Designator: HIA20N140IH-DA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.2 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 54 pF
   Qg ⓘ - Total Gate Charge, typ: 132 nC
   Package: TO247
 

 HIA20N140IH-DA substitution

   - IGBT ⓘ Cross-Reference Search

 

HIA20N140IH-DA Datasheet (PDF)

 ..1. Size:474K  semihow
 hia20n140ih-da.pdf pdf_icon

HIA20N140IH-DA

Aug. 2023HIA20N140IH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 20 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 0.95 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SYMBOL

 8.1. Size:664K  semihow
 hia20n60bp.pdf pdf_icon

HIA20N140IH-DA

Dec 2013VCES = 600 VIC = 20 AHIA20N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-247FEATURES Low VCE(sat) Maximum Junction Temperature 150 GCE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - HIA20N140IH-DA transistor datasheet

 HIA20N140IH-DA cross reference
 HIA20N140IH-DA equivalent finder
 HIA20N140IH-DA lookup
 HIA20N140IH-DA substitution
 HIA20N140IH-DA replacement

 

 
Back to Top

 


 
.