All IGBT. HIA20N140IH-DA Datasheet


HIA20N140IH-DA IGBT. Datasheet pdf. Equivalent

Type Designator: HIA20N140IH-DA

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 300

Maximum Collector-Emitter Voltage |Vce|, V: 1400

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 40

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5

Maximum G-E Threshold Voltag |VGE(th)|, V: 5.2

Maximum Junction Temperature (Tj), ℃: 175

Collector Capacity (Cc), typ, pF: 54

Total Gate Charge (Qg), typ, nC: 132

Package: TO247

HIA20N140IH-DA Transistor Equivalent Substitute - IGBT Cross-Reference Search


HIA20N140IH-DA Datasheet (PDF)

 ..1. Size:474K  semihow


Aug. 2023HIA20N140IH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 20 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 0.95 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SYMBOL

 8.1. Size:664K  semihow


Dec 2013VCES = 600 VIC = 20 AHIA20N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-247FEATURES Low VCE(sat) Maximum Junction Temperature 150 GCE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-

Datasheet: HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , TGPF30N43P , GT30F122 , SG40T120DB , SG60T120UDB3 , SGT60U65FD1PN , SGT60U65FD1PT , OST120N65H4SMF , OST120N65H4UMF , OST120N65H5SMF .


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