All IGBT. OST160N65H5MF Datasheet

 

OST160N65H5MF IGBT. Datasheet pdf. Equivalent


   Type Designator: OST160N65H5MF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 625
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 160
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 237
   Collector Capacity (Cc), typ, pF: 404
   Total Gate Charge (Qg), typ, nC: 261
   Package: TO247-PLUS

 OST160N65H5MF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

OST160N65H5MF Datasheet (PDF)

 ..1. Size:721K  oriental semi
 ost160n65h5mf.pdf

OST160N65H5MF OST160N65H5MF

OST160N65H5MF Enhancement Mode N-Channel Power IGBT General Description OST160N65H5MF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

Datasheet: OST120N65H4SMF , OST120N65H4UMF , OST120N65H5SMF , OST120N65HEMF , OST15N65DRF , OST15N65FRF , OST15N65KRF , OST15N65PRF , GT30J122 , OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF .

 

 
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