All IGBT. OST160N65H5MF Datasheet

 

OST160N65H5MF Datasheet and Replacement


   Type Designator: OST160N65H5MF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 237 nS
   Coesⓘ - Output Capacitance, typ: 404 pF
   Package: TO247-PLUS
 

 OST160N65H5MF substitution

   - IGBT ⓘ Cross-Reference Search

 

OST160N65H5MF Datasheet (PDF)

 ..1. Size:721K  oriental semi
 ost160n65h5mf.pdf pdf_icon

OST160N65H5MF

OST160N65H5MF Enhancement Mode N-Channel Power IGBT General Description OST160N65H5MF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

Datasheet: OST120N65H4SMF , OST120N65H4UMF , OST120N65H5SMF , OST120N65HEMF , OST15N65DRF , OST15N65FRF , OST15N65KRF , OST15N65PRF , TGPF30N43P , OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF .

History: OST30N65KTXF

Keywords - OST160N65H5MF transistor datasheet

 OST160N65H5MF cross reference
 OST160N65H5MF equivalent finder
 OST160N65H5MF lookup
 OST160N65H5MF substitution
 OST160N65H5MF replacement

 

 
Back to Top

 


 
.