All IGBT. OST160N65H5MF Datasheet

 

OST160N65H5MF IGBT. Datasheet pdf. Equivalent


   Type Designator: OST160N65H5MF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 237 nS
   Coesⓘ - Output Capacitance, typ: 404 pF
   Package: TO247-PLUS

 OST160N65H5MF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

OST160N65H5MF Datasheet (PDF)

 ..1. Size:721K  oriental semi
 ost160n65h5mf.pdf

OST160N65H5MF OST160N65H5MF

OST160N65H5MF Enhancement Mode N-Channel Power IGBT General Description OST160N65H5MF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

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