All IGBT. OST20N135HRF Datasheet

 

OST20N135HRF IGBT. Datasheet pdf. Equivalent


   Type Designator: OST20N135HRF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 51.3 pF
   Qgⓘ - Total Gate Charge, typ: 71.5 nC
   Package: TO247

 OST20N135HRF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

OST20N135HRF Datasheet (PDF)

 ..1. Size:706K  oriental semi
 ost20n135hrf.pdf

OST20N135HRF OST20N135HRF

OST20N135HRF_Datasheet Enhancement Mode N-Channel IGBT Features Applications Advanced TGBTTM technology Induction heating Monolithically integrated diode Soft switching applications Excellent conduction and switching loss Excellent stability and uniformity OST20N135HRF , Enhancement Mode N-Channel IGBT General Description V 1350 V CES,

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