All IGBT. OSC90N65HF Datasheet

 

OSC90N65HF Datasheet and Replacement


   Type Designator: OSC90N65HF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 125 nS
   Coesⓘ - Output Capacitance, typ: 1436 pF
   Qg ⓘ - Total Gate Charge, typ: 197 nC
   Package: TO247
 

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OSC90N65HF Datasheet (PDF)

 ..1. Size:707K  oriental semi
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OSC90N65HF

OSC90N65HF Enhancement Mode N-Channel Power IGBT General Description OSC90N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology

Datasheet: OST75N65HZF , OST80N65H4EMF , OST80N65HEMF , OST80N65HEVF , OST80N65HSMF , OST90N60HCZF , OST90N65HM2F , OSC80N65HF , RJP30E2DPP-M0 , RJH3047 , GT30F123 , GT30J127 , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF .

Keywords - OSC90N65HF transistor datasheet

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