All IGBT. OSC90N65HF Datasheet

 

OSC90N65HF Datasheet and Replacement


   Type Designator: OSC90N65HF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 125 nS
   Coesⓘ - Output Capacitance, typ: 1436 pF
   Package: TO247
      - IGBT Cross-Reference

 

OSC90N65HF Datasheet (PDF)

 ..1. Size:707K  oriental semi
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OSC90N65HF

OSC90N65HF Enhancement Mode N-Channel Power IGBT General Description OSC90N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: RJH60M5DPQ-A0 | GT30F123 | FGA15N120FTD | RJH60F6BDPQ-A0 | 2MBI50N-060 | IRG7I319U | SG50N06D2S

Keywords - OSC90N65HF transistor datasheet

 OSC90N65HF cross reference
 OSC90N65HF equivalent finder
 OSC90N65HF lookup
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