GT30F123 Specs and Replacement
Type Designator: GT30F123
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 25 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1(max) V @25℃
Package: TO220F
GT30F123 Substitution - IGBT ⓘ Cross-Reference Search
GT30F123 datasheet
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Specs: OST80N65HEMF , OST80N65HEVF , OST80N65HSMF , OST90N60HCZF , OST90N65HM2F , OSC80N65HF , OSC90N65HF , RJH3047 , SGT40N60NPFDPN , GT30J127 , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF .
Keywords - GT30F123 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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